Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jean-Christophe Lafont"'
Autor:
Fady Abouzeid, Jean-Christophe Lafont, Sebastien Haendler, David Turgis, Anis Feki, Bruno Allard, Faress Tissafi Drissi
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2015, 106, pp.1-11. ⟨10.1016/j.sse.2014.11.018⟩
Solid-State Electronics, Elsevier, 2015, 106, pp.1-11. ⟨10.1016/j.sse.2014.11.018⟩
International audience; New SRAM bit cell architectures have been proposed recently as solutions to the limitations of the six-transistor (6T) SRAM bit cell in term of minimum supply voltage, VDDMIN. There is no demonstrated bit cell as superior unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dee3287a8ea67d52f6d79283062b1050
https://doi.org/10.1016/j.sse.2014.11.018
https://doi.org/10.1016/j.sse.2014.11.018
Autor:
Jean-Christophe Lafont, Faress Tissafi Drissi, Lorenzo Ciampolini, Xavier Jonsson, David Turgis, Jean-Paul Morin, Joseph Nguyen, Cyril Descleves
Publikováno v:
ICCAD
We consider the general problem of the efficient and accurate determination of the yield of an integrated circuit, through electrical circuit level simulation, under variability constraints due to the manufacturing process. We demonstrate the perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0336f1646ae77982cbaa886cd2d2ea96
https://doi.org/10.1145/2966986.2967031
https://doi.org/10.1145/2966986.2967031
Publikováno v:
Proceedings of the 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
S3S
S3S, Oct 2013, Monterey, Canada. ⟨10.1109/S3S.2013.6716525⟩
S3S
S3S, Oct 2013, Monterey, Canada. ⟨10.1109/S3S.2013.6716525⟩
International audience; Sub-threshold operation of circuits becomes more and more attractive due to the ultra-low power consumption. Static Random Access Memory (SRAM) faces an important limitation in read access time that prevents high frequency ope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::366a382e6bdd4b0a5a57ad3167787550
https://hal.archives-ouvertes.fr/hal-01865466
https://hal.archives-ouvertes.fr/hal-01865466
Publikováno v:
Proc. of the 2012 International SoC Design Conference
ISOCC
ISOCC, Nov 2012, Jeju Island, South Korea. ⟨10.1109/ISOCC.2012.6406898⟩
ISOCC
ISOCC, Nov 2012, Jeju Island, South Korea. ⟨10.1109/ISOCC.2012.6406898⟩
International audience; The tendency for low energy consumption in systems-on-chip results in a need for memories operating in the near- and sub-threshold regions. This paper gives a comparative study of Static Random Access Memory (SRAM) bitcells wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf16840c882c80c6876a33b60a1a969f
https://hal.archives-ouvertes.fr/hal-01865458
https://hal.archives-ouvertes.fr/hal-01865458