Repetitive Short-Circuit Tests on SiC VMOS Devices

Autor: Dominique Tournier, Maxime Berthou, Jean Baptiste Fonder, Pascal Bevilacqua

Publikováno v: Materials Science Forum. 858:812-816

SiC MOSFET are now commercially available and show promising performances when considering static losses, commutations and long term reliability. The devices may face short-circuit conditions and knowing their capibility in terms of critical time and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a2282bb15b78305cedb7f5e3193f7174
https://doi.org/10.4028/www.scientific.net/msf.858.812

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Autor: Jean Baptiste Fonder, Dominique Planson, Luong Viet Phung, Pierre Brosselard, Besar Asllani, Pascal Bevilacqua

Publikováno v: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.593-596. ⟨10.4028/www.scientific.net/MSF.924.593⟩
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017)
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States
The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington D.C., United States

International audience; In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 10

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bf88d96bfad9709aa6f9e8276e952cb
https://hal.archives-ouvertes.fr/hal-01857352/document

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Autor: Hichame Maanane, Cécile Genevois, Cédric Duperrier, Farid Temcamani, Jean Baptiste Fonder, Olivier Latry, Laurence Chevalier

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩
Microelectronics Reliability, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩
23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS
23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205
HAL

International audience; This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83d2e43940f82cee71d68f1b239a2891
https://doi.org/10.1016/j.microrel.2012.06.053

High-Efficiency Architecture for Power Amplifiers

Autor: Cédric Duperrier, Farid Temcamani, Jean-Baptiste Fonder, Olivier Latry

This chapter concerns the study of radiofrequency power amplifiers’ reliability, for RAdiowave Detection And Ranging (RADAR) applications, based on gallium nitride transistors. Compared to the literature, this study combines electrical characteriza

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f02d290d424ee67c1457b28854a0d77
https://doi.org/10.1016/b978-1-78548-014-0.50008-6

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Autor: Olivier Latry, Farid Temcamani, Jean-Baptiste Fonder, Cédric Duperrier

Publikováno v: 2014 International Conference on Multimedia Computing and Systems (ICMCS)
2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩
ICMCS

This paper presents measurement of AlGaN/GaN HEMT temperature with two techniques. Coupling of infrared thermography and electrical characterization of drain current shows good agreement of both techniques. They are complementary and may allow spatia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d2d1468e9accc960e8ed94e9beaf6e7
https://hal.archives-ouvertes.fr/hal-01740889