Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jean Pierre Sipma"'
Publikováno v:
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
AlGaN/GaN technology provides a lot of power density, which causes a thermal effect and degrades the whole electronic characteristics of the component. The local heating source appears when the component is biased. Moreover, radar applications work i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb7791790f83a0cfab8641990d5e720
https://doi.org/10.1109/mikon.2016.7492061
https://doi.org/10.1109/mikon.2016.7492061
Autor:
Pascal Dherbécourt, Farid Temcamani, Olivier Latry, Hichame Maanane, Karine Dehais-Mourgues, Cédric Duperrier, Jean-Baptiste Fonder, Jean-Pierre Sipma
This chapter describes how to perform power microwave transistors lifetime tests in operational conditions. The originality of this test bench is its ability to monitor automatically component performance during thousands of hours and to apply electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e83b22b92a54a15811d625f36659b4c
https://doi.org/10.1016/b978-1-78548-014-0.50002-5
https://doi.org/10.1016/b978-1-78548-014-0.50002-5
Autor:
Bouzid Ait Amir, Jean-Loup Alvarez, Younes Aoues, Christian Chong, Pierre Richard Dahoo, Karine Dehais-Mourgues, Pascal Dherbecourt, Cédric Duperrier, Abdelkhalak El Hami, Jean-Baptiste Fonder, Christian Gautier, Armelle Girard, Malika Khettab, Olivier Latry, Hichame Maanane, Abderahman Makhloufi, Eric Pieraerts, Philippe Pougnet, Jean-Pierre Sipma, Farid Temcamani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf251089899c8181758439ad3351538e
https://doi.org/10.1016/b978-1-78548-014-0.50012-8
https://doi.org/10.1016/b978-1-78548-014-0.50012-8
Autor:
Brayima Dakyo, Philippe Eudeline, Jean-Pierre Sipma, Sega Gueye, Sylvain Alves, Michel Stanislawiak, Maxime Olivier
Publikováno v:
IET International Conference on Radar Systems (Radar 2012).
The power transistors such as technologies LDMOS and GaN are used in radar transmitters. The pulse to pulse stability which is an important feature of radar transmitters is characterized by the level of phase and amplitude variation between successiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4905284f64ada892c9297a76d247e4c7
https://doi.org/10.1049/cp.2012.1650
https://doi.org/10.1049/cp.2012.1650
Autor:
Jean Pierre Sipma, Karine Mourgues, Loïc Lachèze, Philippe Eudeline, Pascal Dherbécourt, Olivier Latry, Viswas Purohit, Hichame Maanane, F. Cornu
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Microelectronics Reliability, Elsevier, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Microelectronics Reliability, Elsevier, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
This paper reports a methodology to correlate Hot Carrier Injection (HCI) degradation mechanism and electrical figures of merit on Lateral-Diffused Metal–Oxide-Semiconductor (LDMOS) transistor. This method is based on RF life test in radar operatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35deedb63d0b7ecfb2c9b8d5d7e4103d
https://hal.science/hal-02267392
https://hal.science/hal-02267392
Autor:
Pascal Dherbécourt, Philippe Eudeline, Olivier Latry, F. Cornu, Hichame Maanane, Jean Pierre Sipma, Mohamed Masmoudi, Karine Mourgues
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous dut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7d47be9a3d15ffd5e95dabdd11cf957
https://hal.archives-ouvertes.fr/hal-02267399
https://hal.archives-ouvertes.fr/hal-02267399