Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Jean Louis. Stehle"'
Publikováno v:
Fourier Transform Spectroscopy.
Spectroscopic ellipsometry is a well established technique for the optical characterization of bulk materials, deposited thin films and surface layers [1]. It is based on the measurement of the change of the polarization state of light after reflecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d378a738d571fc29eb5d00a9e69e1b
https://doi.org/10.1364/fts.1997.fwb.3
https://doi.org/10.1364/fts.1997.fwb.3
Autor:
Jean Philippe Piel, Jean Louis Stehle
Publikováno v:
Applied Surface Science. 256:S72-S76
Spectroscopic ellipsometry has long been recognized as a powerful technique to characterize thins films and multilayer structures. It is now routinely used for non-destructive on-line characterization of semiconductor process. SOPRALAB leader in comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6add0056658118a680debad0e617fa9e
https://doi.org/10.1016/j.apsusc.2009.09.060
https://doi.org/10.1016/j.apsusc.2009.09.060
Publikováno v:
Thin Solid Films. :809-818
Spectroscopic ellipsometry is a very useful non-destructive technique to characterise the thickness and composition of multilayers with a spatial resolution of 20×40 μm. The present way to map a sample is to scan the surface of the wafer with this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3824ff2a81265eda6c3b48144889828e
https://doi.org/10.1016/j.tsf.2004.02.030
https://doi.org/10.1016/j.tsf.2004.02.030
Publikováno v:
Journal of Non-Crystalline Solids. 303:167-174
Precise characterization of high k gate dielectrics becomes a challenging task due to the very thin thickness (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560f0f771e1aaab58c8c7be6c6cf84e8
https://doi.org/10.1016/s0022-3093(02)00980-8
https://doi.org/10.1016/s0022-3093(02)00980-8
Publikováno v:
Applied Surface Science. :199-205
Epitaxial Si 1− y C y and Si 1− x − y Ge x C y alloy layers are grown on monocrystalline silicon substrates by multiple energy ion implantation of Ge and C into single Si crystals followed by pulse excimer laser annealing. The properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0039980bda5fbd95db8ed4244cb61063
https://doi.org/10.1016/s0169-4332(98)00399-7
https://doi.org/10.1016/s0169-4332(98)00399-7
Autor:
Pierre Boher, Jean Louis Stehle
Publikováno v:
Thin Solid Films. 318:120-123
A new kind of Real Time Spectroscopic Ellipsometer (RTSE) system is presented in details. A multichannel analyser with photointensifier allows to get spectroscopic measurements over the 0.25–0.85 μm wavelength range with resolution λ/Δλ better
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c234343f31103e7aab2ab15cad79da
https://doi.org/10.1016/s0040-6090(97)01149-8
https://doi.org/10.1016/s0040-6090(97)01149-8
Publikováno v:
Surface and Coatings Technology. :491-495
1.Abstract: Single Ti and TiNx thick films and Ti/TiNx multilayers have been deposited by reactive rf- sputtering with in-situ control by spectroscopic ellipsometry. Spectroscopic ellipsometry allows to measure precisely in real time the thickness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69c95ebafd50def7e62c5cd5a9fb29c
https://doi.org/10.1016/s0257-8972(97)00677-4
https://doi.org/10.1016/s0257-8972(97)00677-4
Autor:
István Bársony, M. Fried, Pierre Boher, Jean Louis Stehle, Nguyen Quoc Khánh, O. Polgár, T. Lohner, Jean Philippe Piel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 112:160-168
Spectroscopic ellipsometry (SE) has been used to characterise damage depth profiles in silicon. The damage was produced by implantation of high energy ions of various atomic number with variable charge state and using various energies. The effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ead8836c4e561a574277b370166993c9
https://doi.org/10.1016/0168-583x(95)01018-1
https://doi.org/10.1016/0168-583x(95)01018-1
Publikováno v:
Applied Surface Science. :376-383
We analyse in detail one critical step in the fabrication of high quality polysilicon on low cost glass substrate by spectroscopic ellipsometry (SE). We use the very promising technique of single shot excimer laser annealing (SSELA), which is known n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6962d2a8e36bdeaa5c7bb204a36c08
https://doi.org/10.1016/0169-4332(95)00489-0
https://doi.org/10.1016/0169-4332(95)00489-0
Autor:
István Bársony, Peter Petrik, Miklos Fried, T. Lohner, Jean Philippe Piel, Eva Vazsonyi, O. Polgár, Jean Louis Stehle
Publikováno v:
Thin Solid Films. 276:223-227
The results of multiparameter fitting of spectroscopic ellipsometric (SE) spectra on porous silicon layers (PSL) were connected with the processing parameters (oxidation, etching time, porosity, argon implantation dose). Two optically different types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16bf0919a4d5ce3517fde71b4dc21226
https://doi.org/10.1016/0040-6090(95)08058-9
https://doi.org/10.1016/0040-6090(95)08058-9