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pro vyhledávání: '"Jean Kirtsch"'
Autor:
Jean Kirtsch, André Granier, T. Gravier, Alain Chantre, Jorge Regolini, Marc Guillermet, Stephan Niel, Gilbert Vincent, Roland Pantel, Delphine Maury, André Grouillet
Publikováno v:
Japanese Journal of Applied Physics. 37:1781
Two innovative process technologies are introduced to overcome problems related to the downscaling of single-polysilicon self-aligned bipolar transistors. First, the use of a selective silicon deposition step before Ti salicidation of the structure i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd61b7b049e10feb1cae1030951a84c3
https://doi.org/10.1143/jjap.37.1781
https://doi.org/10.1143/jjap.37.1781
