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Publikováno v:
IEEE Transactions on Power Electronics. 21:849-855
As the characteristics of insulted gate transistors [like metal–oxide–semiconductor field-effect transistors and insulated gate bipolar transistors (IGBTs)] have been constantly improving, their utilization in power converters operating at higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa53506fda6afac4158ad1e2bb706a5a
https://doi.org/10.1109/tpel.2007.876895
https://doi.org/10.1109/tpel.2007.876895
