Zobrazeno 1 - 10 of 110 pro vyhledávání: '"Jean Godin"'
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Akademický článek
Carta do Sr. Godin des Odonais para o Sr. De La Condamine
Autor: Jean Godin des Odonais, Marie Helene Catherine Torres, Brenda Bressan Thomé
Publikováno v: Cadernos de Tradução, Vol 42, Iss esp. 1 (2022)
Tradução de Carta do Sr. Godin des Odonais para o Sr. De La Condamine
Externí odkaz: https://doaj.org/article/1fc7d46cd60446f9a5e1abccdde9a5ae
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2
Sustained reduction of serum neurofilament light chain over 7 years by alemtuzumab in early relapsing–remitting MS
Autor: Nora Rӧsch, Christian Barro, Zuzanna Michalak, Jens Kuhle, Carina Kaiser, Colin Mitchell, Aleksandra Maceski, Maria Pia Sormani, Jean Godin, Ludwig Kappos, David Leppert, Luke Chung, Alan Jacobs, Srinivas Shankara, Pascal Benkert, Evis Havari, Nadia Daizadeh, Tarek A Samad
Publikováno v: Multiple Sclerosis Journal. 28:573-582
Background: Alemtuzumab efficacy and safety was demonstrated in CARE-MS I and extension studies (CAMMS03409; TOPAZ). Objective: Evaluate serum neurofilament light chain (sNfL) in CARE-MS I patients and highly active disease (HAD) subgroup, over 7 and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::344820f55c4a23065e16311d792d37cc
https://doi.org/10.1177/13524585211032348
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3
High speed multi-level drivers for spectrally efficient optical transmission systems
Autor: Jeremie Renaudier, Peter J. Winzer, Oriol Bertran-Pardo, Agnieszka Konzykowska, Virginie Nodjiadjim, Jean-Yves Dupuy, Jean Godin, Filipe Jorge, Alan H. Gnauck, Haik Mardoyan, Gabriel Charlet, Muriel Riet
Publikováno v: Bell Labs Technical Journal. 18:67-94
High spectral efficiency modulation is key to addressing the optical network capacity challenge. Typical implementations of transmitters for advanced modulation formats use high-resolution silicon digital-to-analog converters, complemented by high ba
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7220127c2aa505b707ad38240fc6e4dc
https://doi.org/10.1002/bltj.21628
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5
A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology
Autor: P. Berdaguer, Muriel Riet, F. Jorge, Virginie Nodjiadjim, Jean Godin, Agnieszka Konczykowska, A. Ouslimani, Jean-Yves Dupuy
Publikováno v: IEEE Transactions on Microwave Theory and Techniques. 61:517-524
We report a 2:1 selector-driver based on a differential distributed amplifier realized in a 0.7-μ m indium phosphide double heterojunction bipolar transistor technology. From transistors reaching fT/fmax of 320/380 GHz and a breakdown voltage (BVCEO
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e024822f2c4ba14c087cb4b249ea4bc8
https://doi.org/10.1109/tmtt.2012.2226057
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Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
Autor: Jean Godin, Cristell Maneux, Brice Grandchamp, François Marc, Muriel Riet, Sudip Ghosh, Thomas Zimmer, Virginie Nodjiadjim, G. A. Koné, Jean-Yves Dupuy
Publikováno v: Microelectronics Reliability. 51:1736-1741
The reliability of InP/InGaAs DHBT under high collector current densities and low junction temperatures is analyzed and modeled. From the Gummel characteristics, we observe several types of device degradation, resulting from the long term changes of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::578d80c389a79fe525010dc92239b6df
https://doi.org/10.1016/j.microrel.2011.07.045
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Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
Autor: François Marc, Jean Godin, Brice Grandchamp, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, G. A. Koné, Cristell Maneux, C. Hainaut
Publikováno v: Microelectronics Reliability. 51:1730-1735
We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100 Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000 h
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::382f82e3a555e6303af4d4b59879db7e
https://doi.org/10.1016/j.microrel.2011.07.073
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Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
Autor: C. Hainaut, François Marc, Jean Godin, G. A. Koné, Cristell Maneux, Virginie Nodjiadjim, Brice Grandchamp, Nathalie Labat, Thomas Zimmer
Publikováno v: Microelectronics Reliability. 50:1548-1553
We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f43aaf5b7e4e76629f324d1fd0364e5f
https://doi.org/10.1016/j.microrel.2010.07.141
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9
Tolerability and Safety of Combined Glatiramer Acetate and N-Acetylcysteine in Relapsing-Remitting Multiple Sclerosis
Autor: Mark Levental, Jean-Louis Stril, Calvin Melmed, Michel Constantin, Hyman M. Schipper, Douglas L. Arnold, Haixiang Su, Francois GrandʼMaison, Fraser Moore, Jean Godin
Publikováno v: Clinical neuropharmacology. 38(4)
Introduction Multiple sclerosis (MS) is an autoimmune disorder of the central nervous system where inflammation and neurodegeneration play key roles. Mounting evidence implicates oxidative stress in the development of irreversible neuronal and glial
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3554bebc2f919b4674192497747962f6
https://pubmed.ncbi.nlm.nih.gov/26166235
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10
InP Double Heterojunction Bipolar Transistor for detection above 1 THz
Autor: A. Gutin, Michael Shur, Jean Godin, Wojciech Knap, N. Dyakonova, Muriel Riet, Agnieszka Konczykowska, Dominique Coquillat, Virginie Nodjiadjim, A. Muraviev, Sandra Ruffenach, Frederic Teppe, Christophe Consejo
Publikováno v: International Conference on Infrared Millimeter and Terahertz Waves
2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)
2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015, Hong Kong, China
HAL
We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e4f13bcd3e33b67e54adf84cec737ac
https://hal.archives-ouvertes.fr/hal-01336484
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