Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jean Coignus"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Ismail Hammad, Jean Coignus, David Ney, Celestin Doyen, Sebastien Perrin, Stephane Ricq, Florian Cacho, Guillaume Wantz, Xavier Federspiel, David Roy, Emmanuel Josse
Publikováno v:
2022 IEEE International Integrated Reliability Workshop (IIRW).
Autor:
Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, Francois Aussenac, Francois Andrieu, Franeois Triozon, Laurent Grenouillet
Publikováno v:
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).
Autor:
Christel Buj, Jean Coignus, Mathieu Sicre, Bastien Mamdy, Megan Agnew, Isobel Nicholson, Francis Calmon, Dominique Golanski, Sara Pellegrini, Remi Helleboid, Denis Rideau, David Roy
Publikováno v:
ESSCIRC / ESSDERC 2021-IEEE 47th European Solid State Circuits Conference
ESSCIRC / ESSDERC 2021-IEEE 47th European Solid State Circuits Conference, Sep 2021, Grenoble, France. pp.143-146, ⟨10.1109/ESSCIRC53450.2021.9567806⟩
ESSCIRC
ESSCIRC / ESSDERC 2021-IEEE 47th European Solid State Circuits Conference, Sep 2021, Grenoble, France. pp.143-146, ⟨10.1109/ESSCIRC53450.2021.9567806⟩
ESSCIRC
International audience; Dark Count Rate (DCR) in Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor technology is characterized and analyzed with a comprehensive simulation methodology. Based on a series of measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b208fa65be46deaffeb0334ada8c6e46
https://hal.science/hal-03622065
https://hal.science/hal-03622065
Autor:
Laurent Grenouillet, Philip N. Klein, Justine Barbot, Jean Coignus, Suzanne Lancaster, Stefan Slesazeck, Ole Richter, Erika Covi, Elisabetta Chicca, Athanasios Dimoulas, Viktor Havel, Quang T. Duong, Thomas Mikolajick
Publikováno v:
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af75b3353a782f4547b577c8bc65d59
https://pub.uni-bielefeld.de/record/2959788
https://pub.uni-bielefeld.de/record/2959788
Autor:
P. Chiquet, T. Francois, Jean Coignus, Uwe Schroeder, F. Gaillard, Nicolas Vaxelaire, Etienne Nowak, S. Chevalliez, Stefan Slesazeck, Marc Bocquet, Laurent Grenouillet, Thomas Mikolajick, F. Aussenac, C. Carabasse, Claudia Richter
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2021, 118 (6), pp.062904. ⟨10.1063/5.0035650⟩
Applied Physics Letters, 2021, 118 (6), pp.062904. ⟨10.1063/5.0035650⟩
International audience; Scaling of planar HfO2-based ferroelectric capacitors is investigated experimentally by varying the capacitor area within 5 orders of magnitude, under the scope of limited thermal budget for crystallization. Both Hf0.5Zr0.5O2
Autor:
C. Pellissier, Etienne Nowak, S. Chevalliez, Furqan Mehmood, F. Mazen, T. Francois, Uwe Schroeder, F. Triozon, Sebastien Kerdiles, Thomas Mikolajick, F. Gaillard, Guillaume Rodriguez, T. Magis, Laurent Grenouillet, Viktor Havel, Jean Coignus, C. Carabasse, Nicolas Vaxelaire, Stefan Slesazeck
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
10nm Si-implanted HfO 2 is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled $.28\mu \mathrm{m}^{2}$ . capacitors demonstrate excellent endurance (109 cycles measured at 4 V, extrap
Autor:
Philippe Blaise, Cecile Nail, E. Nowak, Gabriel Molas, Jean Coignus, Carlo Cagli, Gilbert Sassine, Diego Alfaro Robayo, Jean-Francois Nodin
Publikováno v:
ECS Transactions. 86:35-47
In this work, we address Resistive RAM (RRAM) variability. To this aim, we investigate various RRAM technologies (Oxide RAM and Conductive Bridging RAM), integrated on kb 1T1R arrays. Impact of variability is evaluated and discussed for various RRAM
Autor:
Philippe Boivin, Jean-Paul Barnes, Jean Coignus, Mickael Gros-Jean, S. Jeannot, F. Gaillard, I. Bottala-Gambetta, Nicolas Vaxelaire, Laurent Grenouillet, J. Ferrand, Etienne Nowak, T. Francois, Marc Bocquet, P. Chiquet
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW)
2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739664⟩
2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739664⟩
International audience; A clear comparison between Atomic Layer Deposition and Ion Implantation Si doping techniques is established. Comparable remnant polarization and coercive fields are obtained at lower Si content (%Si) for Ion Implantation, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e400979c5b1a725c8889f66cc1ba58cb
https://hal.science/hal-02399691/document
https://hal.science/hal-02399691/document
Autor:
Etienne Nowak, Subhasish Mitra, Tony F. Wu, Edith Beigne, Elisa Vianello, Binh Quang Le, Alessandro Grossi, Marios Barlas, Cristian Zambelli, Mary Wootters, Mohamed M. Sabry, Laurent Grenouillet, Jean Coignus
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using thorough endurance tests that incorporate fine-grained read operations at the array level, we quantify for the first time temporary write failures (TWF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91cb0a97711daa020f03637e06e09548
http://hdl.handle.net/11392/2403640
http://hdl.handle.net/11392/2403640