Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Jean Chamberlain Chedjou"'
Publikováno v:
Applied Sciences, Vol 13, Iss 10, p 6131 (2023)
In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. The
Externí odkaz:
https://doaj.org/article/6009772bb97c4ff69bbf092bf3c7c168
Publikováno v:
IEEE Access, Vol 8, Pp 42297-42324 (2020)
We develop, for the first time, and validate through some illustrative examples a new neuro-processor based concept for solving (single-vehicle) traveling salesman problems (TSP) in complex and dynamically reconfigurable graph networks. Compared to e
Externí odkaz:
https://doaj.org/article/d6abe757a1ee465a96db62eb625d6ba9
Autor:
Furkat Safarov, Kuchkorov Temurbek, Djumanov Jamoljon, Ochilov Temur, Jean Chamberlain Chedjou, Akmalbek Bobomirzaevich Abdusalomov, Young-Im Cho
Publikováno v:
Sensors, Vol 22, Iss 24, p 9784 (2022)
Currently, there is a growing population around the world, and this is particularly true in developing countries, where food security is becoming a major problem. Therefore, agricultural land monitoring, land use classification and analysis, and achi
Externí odkaz:
https://doaj.org/article/8c24c4cd78894932b8167966b7ed3741
Publikováno v:
Sensors, Vol 21, Iss 17, p 5849 (2021)
Document imaging/scanning approaches are essential techniques for digitalizing documents in various real-world contexts, e.g., libraries, office communication, managementof workflows, and electronic archiving [...]
Externí odkaz:
https://doaj.org/article/743c77e201144375abe29e7cf8b32c4f
Autor:
Kyandoghere Kyamakya, Jean Chamberlain Chedjou, Fadi Al-Machot, Ahmad Haj Mosa, Antoine Bagula
Publikováno v:
Sensors, Vol 21, Iss 6, p 2235 (2021)
Building around innovative services related to different modes of transport and traffic management, intelligent transport systems (ITSs) are being widely adopted worldwide to improve the efficiency and safety of the transportation system [...]
Externí odkaz:
https://doaj.org/article/1539a6f6ec6c4e4d9af49198b12e8ded
Autor:
Kyandoghere Kyamakya, Fadi Al-Machot, Ahmad Haj Mosa, Hamid Bouchachia, Jean Chamberlain Chedjou, Antoine Bagula
Publikováno v:
Sensors, Vol 21, Iss 7, p 2273 (2021)
Intelligent sociotechnical systems are gaining momentum in today’s information-rich society, where different technologies are used to collect data from such systems and mine this data to make useful insights about our daily activities [...]
Externí odkaz:
https://doaj.org/article/92c46cd0c3c4460198e8ed92fa0534ab
Autor:
Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova, Jean Chamberlain Chedjou, Kyandoghere Kyamakya
Publikováno v:
Applied Sciences, Vol 10, Iss 21, p 7935 (2020)
In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charg
Externí odkaz:
https://doaj.org/article/ca2717ec3ae04a6ba00f092e2fa0e1fc
Publikováno v:
Sensors, Vol 20, Iss 21, p 6130 (2020)
Solving ordinary differential equations (ODE) on heterogenous or multi-core/parallel embedded systems does significantly increase the operational capacity of many sensing systems in view of processing tasks such as self-calibration, model-based measu
Externí odkaz:
https://doaj.org/article/cf96a9f2dca94c38af882687722ef794
Autor:
Jacek Oskarbski, Tomasz Kamiński, Kyandoghere Kyamakya, Jean Chamberlain Chedjou, Karol Żarski, Małgorzata Pędzierska
Publikováno v:
Sensors, Vol 20, Iss 18, p 5057 (2020)
Methods used to evaluate the impact of Intelligent Transport System (ITS) services on road safety are usually based on expert assessments or statistical studies. However, commonly used methods are challenging to apply in the planning process of ITS s
Externí odkaz:
https://doaj.org/article/08cd092fcb8b41238fe9334f518d8530
Autor:
Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou, Kyamakya Kyandoghere
Publikováno v:
Applied Sciences, Vol 10, Iss 15, p 5327 (2020)
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shap
Externí odkaz:
https://doaj.org/article/70cf6c3888424a34bea3380752f9a237