Zobrazeno 1 - 10
of 271
pro vyhledávání: '"Jean Camassel"'
Autor:
Pawel Kwasnicki, Jean Camassel, Valdas Jokubavicius, Rositsa Yakimova, Mikael Syväjärvi, Hervé Peyre, Sandrine Juillaguet, Jianwu Sun
Publikováno v:
Materials Science Forum
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩
We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the
Autor:
Marcin Zielinski, Leszek Konczewicz, Sylvie Contreras, Jean Camassel, Hervé Peyre, Sandrine Juillaguet, Pawel Kwasnicki
Publikováno v:
Silicon Carbide and Related Materials 2012
ECSCRM 2012
ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩
ECSCRM 2012
ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩
Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×1019atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show tha
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
Autor:
E. Roudon, Jean Camassel, Adrien Michon, Sébastien Chenot, Thierry Chassagne, Denis Lefebvre, Marc Portail, Marcin Zielinski, Yvon Cordier, Sylvie Contreras, Stéphane Vézian, Benoit Jouault
Publikováno v:
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, OH, SEP 11-16, 2011; International audience; We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of grow
Autor:
Valdas Jokubavicius, Mikael Syväjärvi, Sandrine Juillaguet, Teddy Robert, Rositza Yakimova, Jean Camassel, Jianwu Sun
Publikováno v:
Materials Science Forum. :407-410
The radiative recombination spectra of 6H-SiC epilayers grown on low angle (1.4° off-axis) substrates have been investigated by low temperature photoluminescence spectroscopy. Four different types of stacking faults have been identified, together wi
Autor:
Gabriel Ferro, Mikael Syväjärvi, Georgios Zoulis, Rositsa Yakimova, Sandrine Juillaguet, Jean Lorenzzi, Jean Camassel, Hervé Peyre, Jian Sun, Remigijus Vasiliauskas
Publikováno v:
Materials Science Forum
HETEROSIC & WASMPE 2011
HETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩
HETEROSIC & WASMPE 2011
HETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩
We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homog
Autor:
Efstathios K. Polychroniadis, Maya Marinova, Sandrine Juillaguet, Alkyoni Mantzari, Ariadne Andreadou, Jean Camassel, Gabriel Ferro, Georgios Zoulis, Jean Lorenzzi, Jianwu Sun
Publikováno v:
Materials Science Forum. :165-168
The current communication focuses on the investigation of 3C-SiC layers grown by the Vapour-Liquid-Solid mechanism on on-axis Si-face 6H-SiC substrates in SiSn melts with different compositions and at different growth temperatures. The layers are stu
Autor:
Nicolas Camara, Josep Montserrat, Esther Pausas, A. Constant, Jean Camassel, Phillippe Godignon
Publikováno v:
Materials Science Forum. :500-503
Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC lateral MOSFETs. We show that this innovative oxidation method has not only the advantage to significantly red
Autor:
Guoli L. Sun, Jean Camassel, Sandrine Juillaguet, Thierry Ouisse, Roland Madar, Irina G. Galben-Sandulache, Didier Chaussende, Georgios Zoulis, Jianwu Sun
Publikováno v:
Materials Science Forum. :169-172
We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filte
Publikováno v:
Nanoscience and Nanotechnology Letters. 3:49-54
We review the results of growing few layer graphene on alpha-SiC with different surface orientations. To this end we have used successively a pure {000-1} C face, a 8 degrees-off one, a nonpolar {11-20} surface and, finally, a 8 degrees-off Si face a
Autor:
Gabriel Ferro, François Cauwet, Efstathios K. Polychroniadis, Olivier Kim-Hak, Maher Soueidan, Maya Marinova, Georgios Zoulis, Patrick Chaudouët, Hervé Peyre, Jean Camassel, Davy Carole, Jianwu Sun, Jean Lorenzzi, Nikoletta Jegenyes
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2010, 312 (23), pp.3443-3450. ⟨10.1016/j.jcrysgro.2010.08.058⟩
Journal of Crystal Growth, Elsevier, 2010, 312 (23), pp.3443-3450. ⟨10.1016/j.jcrysgro.2010.08.058⟩
International audience; We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis a-SiC substrates. To this end,