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pro vyhledávání: '"Jean Bernardini"'
Publikováno v:
Defect and Diffusion Forum. 322:129-150
With the development of nanotechnologies, the number of industrial processes dealing with the production of nanostructures or nanoobjects is in constant progress (microelectronics, metallurgy). Thus, knowledge of atom mobility and the understanding o
Autor:
Jean Bernardini, Dezső L. Beke
Publikováno v:
Defect and Diffusion Forum. :1362-1370
In this paper, examples of some of the most challenging features of GB diffusion are considered covering selected problems, strongly related to the research activity at our Laboratories and to the scientific interest of Boris Bokstein too. The follow
Towards a Correlation between High-Temperature Creep and Volume Diffusion for Equiatomic NiTi Alloys
Publikováno v:
Defect and Diffusion Forum
Defect and Diffusion Forum, 2008, 280-281, pp.97-104
Defect and Diffusion Forum, Trans Tech Publications, 2008, 280-281, pp.97-104
Defect and Diffusion Forum, 2008, 280-281, pp.97-104
Defect and Diffusion Forum, Trans Tech Publications, 2008, 280-281, pp.97-104
Classically a master curve as Dorn's equation is applied for elucidating stationary creep behaviour within high temperature range (T > 0.6 Tm). As the diffusion of both 63Ni and 44Ti have been measured in an equiatomic NiTi, an effective choice of cr
Publikováno v:
Defect and Diffusion Forum. :312-317
The behaviour of quenched defects in Ni2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, a
Publikováno v:
Defect and Diffusion Forum
Defect and Diffusion Forum, Trans Tech Publications, 2005, 237-240, pp. 543-547
Defect and Diffusion Forum, 2005, 237-240, pp. 543-547. ⟨10.4028/www.scientific.net/DDF.237-240.543⟩
Defect and Diffusion Forum, Trans Tech Publications, 2005, 237-240, pp. 543-547
Defect and Diffusion Forum, 2005, 237-240, pp. 543-547. ⟨10.4028/www.scientific.net/DDF.237-240.543⟩
Ni grain boundary diffusion was measured in slightly Ti rich polycrystalline NiTi shapememory alloy in the temperature range of 428-678K. Grain boundary tail in the penetration plots could only be detected below 700 K. The temperature dependence of t
Publikováno v:
International Journal of Materials Research. 95:888-894
Cation diffusion in α-alumina has been the subject of recent investigations, self-diffusion by the radiotracer technique and impurity diffusion by the SIMS technique. A review of the data is carried out to clarify the bulk diffusion mechanisms. Alum
Publikováno v:
Zeitschrift für Metallkunde. 95:888-894
Cation diffusion in α-alumina has been the subject of recent investigations, self-diffusion by the radiotracer technique and impurity diffusion by the SIMS technique. A review of the data is carried out to clarify the bulk diffusion mechanisms. Alum
Publikováno v:
Applied Surface Science. :244-248
Auger electron spectroscopy technique was used to study surface segregation of Ge in concentrated amorphous Si 1- x Ge x thin film alloys. The alloys (with Ge bulk concentrations in the range of 18–58 at.%) were prepared by dc magnetron sputtering
Publikováno v:
Applied Surface Science. :809-814
To characterise insulating materials, measurements of their ability to trap or release injected charges have been developed recently by induced charge measurement (ICM). This new technique allows to investigate the charging properties of bulk or thin
Publikováno v:
Interface Science. 11:33-40
In many experimental studies, curved penetration profiles are observed for grain boundary diffusion performed in the B kinetics regime in contrast to the shape expected from the solutions of the second Fick's equation. To explain these curvatures the