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pro vyhledávání: '"Jeakwan Kwon"'
Autor:
Taeho Jeon, Yujong Noh, Heejoung Park, Won-Sun Park, Chang-Hyuk Lee, Yo-Hwan Koh, In-Suk Yun, Chul-Woo Yang, Jinhaeng Lee, Moonsoo Sung, Sunghoon Ahn, Joong-Seob Yang, Yongdeok Cho, Hyunjong Jin, Sanghwan Kim, Jooyun Ha, Jeawon Choi, Chae-Kyu Jang, Sanghwa Chung, Byoung-In Joo, Jee-Yul Kim, Jeakwan Kwon, Sok-Kyu Lee, Jeong Byoung Kwan, Dae-Il Choi
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:97-106
Novel program and read schemes are presented to break barriers in scaling of NAND flash memory such as threshold voltage endurance from floating gate interference, and charge loss tolerance. To enhance threshold voltage endurance and charge loss tole