Zobrazeno 1 - 10
of 468
pro vyhledávání: '"Jea-Gun Park"'
Autor:
Han‐Sol Jun, Dae‐Seong Woo, So‐Hyun Lee, Yohan Choi, Yeonsoo Shin, Tae‐Hun Shim, Jae‐Joon Kim, Jea‐Gun Park
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract A stochastic binary neuron is developed for probabilistic computing using a perpendicular spin‐transfer torque (p‐STT) neuron device and its associated peripheral circuits. The p‐STT neuron device, featuring a 300‐nm‐diameter pilla
Externí odkaz:
https://doaj.org/article/cd8edaa7ed5f477684010ea26c514850
Publikováno v:
Nanomaterials, Vol 14, Iss 13, p 1066 (2024)
The resolution of Si complementary metal–oxide–semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and dro
Externí odkaz:
https://doaj.org/article/5c17865c2b694b1894369f8ee03739ed
Publikováno v:
Nanomaterials, Vol 14, Iss 12, p 1055 (2024)
This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In0.53P0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; VIn−) within the bulk of t
Externí odkaz:
https://doaj.org/article/dae0d12cf08e4144b372aa3f88d059f0
Autor:
Gi-Ppeum Jeong, Jun-Seong Park, Seung-Jae Lee, Pil-su Kim, Man-Hyup Han, Seong-Wan Hong, Eun-Seong Kim, Jin-Hyung Park, Byoung-Kwon Choo, Seung-Bae Kang, Jea-Gun Park
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed.
Externí odkaz:
https://doaj.org/article/b2d88fea839a4b08bae5c4aedf494f14
Autor:
Young-Hye Son, Gi-Ppeum Jeong, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jae-Young Bae, Sung-In Kim, Jin-Hyung Park, Jea-Gun Park
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process
Externí odkaz:
https://doaj.org/article/3fb08806d82440e48508ac56b10314b3
Autor:
Soo‐Min Jin, Shin‐Young Kang, Hea‐Jee Kim, Ju‐Young Lee, In‐Ho Nam, Tae‐Hun Shim, Yun‐Heub Song, Jea‐Gun Park
Publikováno v:
Electronics Letters, Vol 58, Iss 1, Pp 38-40 (2022)
Abstract The multi‐level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse widt
Externí odkaz:
https://doaj.org/article/80683cc1d6544114bbd798f46ae2033e
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 390 (2023)
Fumed silica-based ultra-high-purity synthetic quartz powder was developed via the sol–gel process to apply to quartz wares and quartz crucibles for use in advanced semiconductor processes. The process conditions of preparing potassium silicate sol
Externí odkaz:
https://doaj.org/article/507617a8e28e463fa844061a1fa454c8
Autor:
Jae-Young Bae, Man-Hyup Han, Seung-Jae Lee, Eun-Seong Kim, Kyungsik Lee, Gon-sub Lee, Jin-Hyung Park, Jea-Gun Park
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3893 (2022)
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, es
Externí odkaz:
https://doaj.org/article/ec5452748e76439891964e1f2f13d52f
Autor:
Byoung-Seok Lee, Min-Won Kim, Ji-Hun Kim, Sang-Dong Yoo, Tae-Hun Shim, Jin-Pyo Hong, Jea-Gun Park
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045007-045007-6 (2021)
Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications. However, conventional TFETs introduce both random dopant fluctuat
Externí odkaz:
https://doaj.org/article/ca909444aed148d780149d74d4f4db56
Autor:
Jun-Myeong Lee, Jong-Chan Lee, Seong-In Kim, Seung-Jae Lee, Jae-Yung Bae, Jin-Hyung Park, Jea-Gun Park
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 969 (2022)
To scale down semiconductor devices to a size less than the design rule of 10 nm, lithography using a carbon polymer hard-mask was applied, e.g., spin-on-carbon (SOC) film. Spin coating of the SOC film produces a high surface topography induced by pa
Externí odkaz:
https://doaj.org/article/dae8a253767d4fe587b2130c17e63c87