Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Je-Min Ryu"'
Autor:
Yesin Ryu, Sung-Gi Ahn, Jae Hoon Lee, Jaewon Park, Yong Ki Kim, Hyochang Kim, Yeong Geol Song, Han-Won Cho, Sunghye Cho, Seung Ho Song, Haesuk Lee, Useung Shin, Jonghyun Ahn, Je-Min Ryu, Sukhan Lee, Kyoung-Hwan Lim, Jungyu Lee, Jeong Hoan Park, Jae-Seung Jeong, Sunghwan Joo, Dajung Cho, So Young Kim, Minsu Lee, Hyunho Kim, Minhwan Kim, Jae-San Kim, Jinah Kim, Hyun Gil Kang, Myung-Kyu Lee, Sung-Rae Kim, Young-Cheon Kwon, Young Yong Byun, Kijun Lee, Sangkil Park, Jaeyoun Youn, Myeong-O Kim, Kyomin Sohn, Sang-Joon Hwang, Jooyoung Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:1051-1061
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c80db8e5f79af25b48cddf42ba40bee
https://doi.org/10.1109/jssc.2022.3232096
https://doi.org/10.1109/jssc.2022.3232096
Autor:
Yesin Ryu, Young-Cheon Kwon, Jae Hoon Lee, Sung-Gi Ahn, Jaewon Park, Kijun Lee, Yu Ho Choi, Han-Won Cho, Jae San Kim, Jungyu Lee, Haesuk Lee, Seung Ho Song, Je Min Ryu, Yeong Ho Yun, Useung Shin, Dajung Cho, Jeong Hoan Park, Jae-Seung Jeong, Sukhan Lee, Kyoung-Hwan Lim, Tae-Sung Kim, Kyungmin Kim, Yu Jin Cha, Ik Joo Lee, Tae Kyu Byun, Han Sik Yoo, Yeong Geol Song, Myung-Kyu Lee, Sunghye Cho, Sung-Rae Kim, Ji-Min Choi, Hyoung Min Kim, Soo Young Kim, Jaeyoun Youn, Myeong-O Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00a99a13ae901f43741fcb5c71c87960
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830391
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830391
Autor:
Jae-Hoon Lee, Soo-Young Kim, O Seongil, Kyomin Sohn, Myeong Jun Song, Yu-Hwan Ro, Sukhan Lee, Hyoung-Min Kim, Wang David T, Jongyoon Choi, Je Min Ryu, Eun-Bong Kim, SooYoung Kim, Nam Sung Kim, Jae-Youn Youn, Daeho Kim, Sang-Hyuk Kwon, Jin Kim, Jin Guk Kim, Jong-Pil Son, Bengseng Phuah, Hyun-Sung Shin, Hae-Suk Lee, Shin-haeng Kang, Young-Cheon Kwon, Seung-Woo Seo, Young-min Cho, Hak-soo Yu, Joon-Ho Song, Ahn Choi
Publikováno v:
ISSCC
In recent years, artificial intelligence (AI) technology has proliferated rapidly and widely into application areas such as speech recognition, health care, and autonomous driving. To increase the capabilities of AI more powerful systems are needed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::807b77e7255e186b2571cf42a2acc79f
https://doi.org/10.1109/isscc42613.2021.9365862
https://doi.org/10.1109/isscc42613.2021.9365862
Autor:
Hyunui Lee, Won-Chang Jung, Chi-Sung Oh, Seok-Yong Kang, Seong-Jin Jang, Gyo-Young Jin, Jung-Hwan Choi, Hye-Seung Yu, Min-Sang Park, Dong-Hak Shin, Seong-young Seo, Je-Min Ryu, Jae-Hun Jung, Reum Oh, Young-Soo Sohn, Won-Joo Yun, Sang-hoon Shin, Yong-Cheol Bae, Kyomin Sohn
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:250-260
A 1.2 V 20 nm 307 GB/s high-bandwidth memory (HBM) DRAM is presented to satisfy a high-bandwidth requirement of high-performance computing application. The HBM is composed of buffer die and multiple core dies, and each core die has 8 Gb DRAM cell arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827665edb0ba9509cbde556ef4c224a8
https://doi.org/10.1109/jssc.2016.2602221
https://doi.org/10.1109/jssc.2016.2602221
Autor:
Young-Soo Sohn, Seong-young Seo, Won-Joo Yun, Dong-Hak Shin, Won-Chang Jung, Min-Sang Park, Chi-wook Kim, Chi-Sung Oh, Kyomin Sohn, Sang-hoon Shin, Jae-Wook Lee, Jung-Hwan Choi, Seong-Jin Jang, Reum Oh, Seouk-Kyu Choi, Jae-Hun Jung, Je-Min Ryu, Kyung-woo Nam, Uk-Song Kang, Hye-Seung Yu, Gyo-Young Jin
Publikováno v:
ISSCC
Demand for higher bandwidth DRAM continues to increase, especially in high-performance computing and graphics applications. However, conventional DRAM devices such as DDR4 DIMM and GDDR5 cannot satisfy these needs since they are bandwidth limited to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b27363f277071e55e16f77455d591f2e
https://doi.org/10.1109/isscc.2016.7418034
https://doi.org/10.1109/isscc.2016.7418034