Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Je SG"'
Autor:
Kim DY; Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.; Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea., Ain QU; Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea.; Materials Science Lab, Department of Physics, Quaid-I-Azam University, Islamabad, 45320, Pakistan., Nam YS; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea., Yu JS; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea., Lee SH; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea., Chang JY; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea., Kim K; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea., Shim WY; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea., Kim DH; Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Je SG; Department of Physics, Chonnam National University, Gwangju, 61186, Republic of Korea., Min BC; Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea., Rhim SH; Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea., Choe SB; Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea.
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Aug; Vol. 11 (29), pp. e2309467. Date of Electronic Publication: 2024 Apr 16.
Autor:
Zhou, HA, Liu, J, Wang, Z, Zhang, Q, Xu, T, Dong, Y, Zhao, L, Je, SG, Im, MY, Xu, K, Zhu, J, Jiang, W
Publikováno v:
Advanced Functional Materials, vol 31, iss 46
Interfacially asymmetric magnetic multilayers made of heavy metal/ferromagnet have attracted considerable attention in the spintronics community for accommodating spin-orbit torques (SOTs) and meanwhile for hosting chiral spin textures. In these mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::ac970ad0fef96c807d4dd77ade75f006
https://escholarship.org/uc/item/2cd4f266
https://escholarship.org/uc/item/2cd4f266
Publikováno v:
ACS Applied Nano Materials, vol 4, iss 9
Stochasticity in magnetic nanodevices is an essential characteristic for harnessing these devices to computing based on population coding or the building blocks of probabilistic computing, p-bits. A magnetic tunneling junction (MTJ) consisting of a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c3b78b07753bb62ab386de88de5f42b4
https://escholarship.org/uc/item/80z264z9
https://escholarship.org/uc/item/80z264z9
Autor:
Xu T; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China., Zhang Y; School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China., Wang Z; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China.; School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China., Bai H; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China., Song C; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China., Liu J; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China., Zhou Y; School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China., Je SG; Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720, United States., N'Diaye AT; Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720, United States., Im MY; Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720, United States., Yu R; School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China., Chen Z; School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, MOE Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China., Jiang W; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.; Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China.; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
Publikováno v:
ACS nano [ACS Nano] 2023 Apr 25; Vol. 17 (8), pp. 7920-7928. Date of Electronic Publication: 2023 Apr 03.
Autor:
Chen X; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore.; Data Storage Institute, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore., Lin M; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore., Kong JF; Institute of High Performance Computing, Agency for Science, Technology & Research (A*STAR), Singapore, 138632, Singapore., Tan HR; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore., Tan AKC; Data Storage Institute, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore., Je SG; Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Tan HK; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore.; Data Storage Institute, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore., Khoo KH; Institute of High Performance Computing, Agency for Science, Technology & Research (A*STAR), Singapore, 138632, Singapore., Im MY; Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Soumyanarayanan A; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore.; Data Storage Institute, Agency for Science, Technology & Research (A*STAR), Singapore, 138634, Singapore.; Department of Physics, National University of Singapore, Singapore, 117551, Singapore.
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2022 Feb; Vol. 9 (6), pp. e2103978. Date of Electronic Publication: 2022 Jan 02.
Autor:
Kim HJ; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon, 34113, Republic of Korea.; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno jungang-daero, Daegu, 42988, Republic of Korea., Je SG; Department of Physics, Chonnam National University, 77 Yongbong-ro, Gwangju, 61186, Republic of Korea., Moon KW; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon, 34113, Republic of Korea., Choi WC; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno jungang-daero, Daegu, 42988, Republic of Korea., Yang S; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon, 34113, Republic of Korea., Kim C; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon, 34113, Republic of Korea., Tran BX; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno jungang-daero, Daegu, 42988, Republic of Korea., Hwang C; Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon, 34113, Republic of Korea., Hong JI; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno jungang-daero, Daegu, 42988, Republic of Korea.
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2021 Sep; Vol. 8 (17), pp. e2100908. Date of Electronic Publication: 2021 Jul 15.
Autor:
Je SG; Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea.; Department of Physics, Chonnam National University, Gwangju 61186, Korea., Thian D; Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore., Chen X; Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore.; Data Storage Institute, Agency for Science, Technology, and Research, 138634 Singapore., Huang L; Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore.; Data Storage Institute, Agency for Science, Technology, and Research, 138634 Singapore., Jung DH; School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea., Chao W; Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States., Lee KS; School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea., Hong JI; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea., Soumyanarayanan A; Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore.; Data Storage Institute, Agency for Science, Technology, and Research, 138634 Singapore.; Department of Physics, National University of Singapore, 117551 Singapore., Im MY; Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.; Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea.
Publikováno v:
Nano letters [Nano Lett] 2021 Feb 10; Vol. 21 (3), pp. 1253-1259. Date of Electronic Publication: 2021 Jan 22.
Autor:
Je SG; Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.; Department of Emerging Materials Science, DGIST, Daegu 42988, Korea.; Center for Spin-Orbitronic Materials, Korea University, Seoul 02841, Korea.; Department of Physics, Chonnam National University, Gwangju 61186, Korea., Han HS; School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea., Kim SK; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States., Montoya SA; Space and Naval Warfare Systems Center Pacific, San Diego, California 92152, United States., Chao W; Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States., Hong IS; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea., Fullerton EE; Center for Memory and Recording Research, University of California-San Diego, La Jolla, California 92093, United States.; Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093, United States., Lee KS; School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea., Lee KJ; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea.; Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea., Im MY; Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.; Department of Emerging Materials Science, DGIST, Daegu 42988, Korea.; School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea., Hong JI; Department of Emerging Materials Science, DGIST, Daegu 42988, Korea.
Publikováno v:
ACS nano [ACS Nano] 2020 Mar 24; Vol. 14 (3), pp. 3251-3258. Date of Electronic Publication: 2020 Mar 10.
Autor:
Hong J; School of Optical and Electronic Information, Huazhong University of Science and Technology Wuhan 430074 PR China jehong@hust.edu.; Research and Development Division, JS Nanotechnologies LLC San Jose CA 95134 USA., Luo Q; School of Optical and Electronic Information, Huazhong University of Science and Technology Wuhan 430074 PR China jehong@hust.edu., Jung D; Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology Pohang 37673 South Korea., Je SG; Center for X-ray Optics, Lawrence Berkeley National Laboratory Berkeley CA 94720 USA., Kim Y; WONIK IPS Co. Ltd. Pyeongtaek 17709 South Korea., Im MY; Center for X-ray Optics, Lawrence Berkeley National Laboratory Berkeley CA 94720 USA., Hwang CC; Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology Pohang 37673 South Korea., Khizroev S; Electrical and Computer Engineering, University of Miami Coral Gables FL 33146 USA., Chung S; Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology Seoul 02792 South Korea., You L; School of Optical and Electronic Information, Huazhong University of Science and Technology Wuhan 430074 PR China jehong@hust.edu.
Publikováno v:
Nanoscale advances [Nanoscale Adv] 2019 May 16; Vol. 1 (7), pp. 2523-2528. Date of Electronic Publication: 2019 May 16 (Print Publication: 2019).
Autor:
Je SG; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France.; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Vallobra P; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Srivastava T; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France., Rojas-Sánchez JC; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Pham TH; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Hehn M; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Malinowski G; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Baraduc C; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France., Auffret S; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France., Gaudin G; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France., Mangin S; Institut Jean Lamour, CNRS UMR 7198 , Université de Lorraine , Nancy F-54500 , France., Béa H; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France., Boulle O; INAC-SPINTEC, CNRS, CEA, Grenoble INP , Université Grenoble Alpes , 38000 Grenoble , France.
Publikováno v:
Nano letters [Nano Lett] 2018 Nov 14; Vol. 18 (11), pp. 7362-7371. Date of Electronic Publication: 2018 Oct 15.