Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jayjit Mukherjee"'
Autor:
Jagori Raychaudhuri, Jayjit Mukherjee, Rajesh Bag, Amit Malik, Sudhir Kumar, D. S. Rawal, Meena Mishra, Santanu Ghosh
Publikováno v:
Silicon. 14:12505-12512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9539c70a724a7637638fddbf3fd1fe97
https://doi.org/10.1007/s12633-022-01951-w
https://doi.org/10.1007/s12633-022-01951-w
Publikováno v:
Journal of Semiconductors. 44:042802
Trap characterization on GaN Schottky barrier diodes (SBDs) has been carried out using deep-level transient spectroscopy (DLTS). Selective probing by varying the ratio of the rate window values (r) incites different trap signatures at similar tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c732cebecbd556bf4334e0951f01a7
https://doi.org/10.1088/1674-4926/44/4/042802
https://doi.org/10.1088/1674-4926/44/4/042802
Publikováno v:
IETE Technical Review. 39:335-342
This article presents the study of trapping effects in AlGaN/GaN high electron mobility transistors (HEMTs). Conventional methods like temperature-dependent capacitance-voltage (CV) and pulsed-IV (...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0195bb0fb0d27bcfe938497ecba84c48
https://doi.org/10.1080/02564602.2020.1853619
https://doi.org/10.1080/02564602.2020.1853619
Publikováno v:
physica status solidi (a). 219:2200211
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f3bbbab151d1648258291e4230df90
https://doi.org/10.1002/pssa.202200211
https://doi.org/10.1002/pssa.202200211
Autor:
Jayjit Mukherjee, Jagori Raychaudhuri, Sudhir Kumar, Amit Malik, Sunil Sharma, D. S. Rawal, R. S. Dhaka
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfea5111ce9522816ac55f0eb9028249
https://doi.org/10.1109/icee50728.2020.9776897
https://doi.org/10.1109/icee50728.2020.9776897
Publikováno v:
Materials Science in Semiconductor Processing. 137:106222
The recovery of high reverse gate leakage current in AlGaN/GaN HEMTs has been analyzed in this study. To demonstrate the recovery after a thermal stress for large time periods (8–12 h), two mechanisms: phonon assisted tunnelling (PAT) and trap assi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c77eebcdeb13f75ccb20984853dcc9
https://doi.org/10.1016/j.mssp.2021.106222
https://doi.org/10.1016/j.mssp.2021.106222
Autor:
Meena Mishra, Jagori Raychaudhuri, Rajesh K. Bag, Sudhir Kumar, Santanu Ghosh, Jayjit Mukherjee
Publikováno v:
Semiconductor Science and Technology. 36:105005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6af2c25a0e3e4d9ca4bc56aace61f9b
https://doi.org/10.1088/1361-6641/ac1054
https://doi.org/10.1088/1361-6641/ac1054
Publikováno v:
2016 International Symposium on Antennas and Propagation (APSYM).
In this paper, a suspended, compact, circularly polarized microstrip antenna with “SWASTIKA” shaped slot has been introduced which can be operated within the ISM band covering the range of 433 MHz—434.79 MHz. The antenna has been designed using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03efc82eb4e412631d756c0479612769
https://doi.org/10.1109/apsym.2016.7929143
https://doi.org/10.1109/apsym.2016.7929143