Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jayarama Shenoy"'
Autor:
Talha Ahmed, Jayarama Shenoy, Ashfaque Mohammed, Shabin Fahad, Bichu Joseph Maliakal, Manmohan Singh Rajput
Publikováno v:
Online Journal of Health & Allied Sciences, Vol 19, Iss 2 (2020)
Trichilemmal carcinoma is a rare hair follicle tumour which develops from the outer root sheath of the hair follicle. It is thought to occur from a malignant transformation of a benign Trichilemmoma and is usually found on sun-exposed areas such face
Externí odkaz:
https://doaj.org/article/2f345f3175954829b38a70e080e79f6d
Autor:
Talha Ahmed, Jayarama Shenoy, Ashfaque Mohammed, Syed Mahmood Ayaz, Bichu Joseph Maliakal, Manmohan Singh Rajput
Publikováno v:
Online Journal of Health & Allied Sciences, Vol 19, Iss 2 (2020)
Rosai-Dorfman disease is an extremely rare disorder characterized by proliferation and accumulation of histiocytes in lymph nodes, usually in the cervical region. In approximately 43% cases, this accumulation occurs in extra nodal sites such as the s
Externí odkaz:
https://doaj.org/article/798471275215443db0d75fd25cfca57b
Publikováno v:
Indian Journal of Surgery. 77:275-282
Jejunostomy is usually indicated as an additional procedure during major surgery of upper digestive tract to administer enteral nutrition in post-operative period. Complications associated with it can be mechanical, infectious, gastrointestinal or me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e665cb88994640d82dc5708c7b42367
https://doi.org/10.1007/s12262-012-0795-y
https://doi.org/10.1007/s12262-012-0795-y
Autor:
John W. Palmour, Michael R. Melloch, K. G. Irvine, G. L. Chindalore, Jayarama Shenoy, J.A. Cooper
Publikováno v:
Journal of Electronic Materials. 24:303-309
The response time of deep-lying interface states in silicon carbide metal-oxide semiconductor (MOS) capacitors may be thousands of years at room temperature. To accurately measure interface state density beyond about 0.6 eV from the band edge, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::addffc6a3f605975d7742b89c770522b
https://doi.org/10.1007/bf02659691
https://doi.org/10.1007/bf02659691
Publikováno v:
Applied Physics Letters. 68:2231-2233
Thermal processing of polycrystalline silicon (polysilicon)/SiO2/SiC metal‐oxide‐semiconductor (MOS) devices following polysilicon deposition can have an adverse effect on the electrical properties of the SiO2/SiC interface. The primary effect is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78800a44938ad43ac4f30b00ef5e33d
https://doi.org/10.1063/1.115868
https://doi.org/10.1063/1.115868
Publikováno v:
Applied Physics Letters. 68:803-805
The 4H polytype of silicon carbide (SiC) has a wider band gap and higher electron mobility than either the 6H or 3C polytypes. We show here that similar oxidation rates and interfacial quality can be obtained on 4H‐SiC and 6H‐SiC by thermal oxida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00aacd980d435497224a2908b8df6c43
https://doi.org/10.1063/1.116538
https://doi.org/10.1063/1.116538