Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jaya Lohani"'
Autor:
R. Raman, Anshu Goyal, Brajesh S. Yadav, Ufana Riaz, Garima Upadhyaya, Aman Arora, Sachin K. Saini, Rajesh K. Bag, M. V. G. Padmavati, R.A. Khan, Jaya Lohani, Vikash K. Singh, Renu Tyagi, Kapil Narang, Anubha Jain
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:14336-14344
In this study, the GaN films were deposited in the multilayered structures under different growth conditions. SIMS analysis showed that intrinsic carbon incorporation around two orders can be controlled effectively by varying the growth parameters. D
Publikováno v:
Vacuum. 164:343-348
Epitaxial GaAs nanostructures have been grown on GaAs (111)B surface by metal organic chemical vapor deposition (MOCVD) using in situ self assembled Gallium (Ga) droplets as catalyst. The effect of growth pressure and time on the shape, size, and sur
Publikováno v:
Journal of Nanoparticle Research. 21
Interaction of CdSe quantum dots (QDs) with epitaxially grown GaAs nanostructures has been studied using photoluminescence (PL) technique. Highly fluorescent CdSe QDs of size 3.9 nm were synthesized by colloidal method and coated over GaAs nanostruct
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:2335-2341
Growth of single crystalline AlGaAs nanostructures was carried out on highly lattice mismatched sapphire substrate by metal organic vapor phase epitaxy technique without using any external catalyst. In situ deposited Ga droplets were used as catalyst
Publikováno v:
Materials Research Express. 6:105001
Axial heterostructure in a nanowire framework is of interest for next generation electronic and optoelectronic devices. However, fabrication of such one-dimensional nano-architecture by efficient, economical and convenient routes remains a research c
Publikováno v:
Nano-Structures & Nano-Objects. 18:100284
GaN nanostructures have been fabricated by reactive ion etching (RIE) with and without mask. The mask comprising of self assembled nanoparticles has been prepared by rapid thermal annealing (RTA) of thin film of Ni deposited on GaN epilayers grown by
Publikováno v:
Canadian Journal of Chemistry. 89:549-554
A new biaryl-based bisazide has been used to crosslink poly(3-hexylthiophene), a conducting polymer useful for organic electronics. Crosslinking was monitored using infrared spectroscopy and film morphology was studied using scanning electron microsc
Publikováno v:
Synthetic Metals. 160:2061-2064
Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiati
Publikováno v:
Bulletin of the Korean Chemical Society. 30:2895-2898
C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra
Publikováno v:
Pramana. 71:579-589
Organic thin film transistors (OTFTs) were fabricated using pentacene as the active layer with two different gate dielectrics, namely SiO2 and poly(methyl methacrylate) (PMMA), in top contact geometry for comparative studies. OTFTs with SiO2 as diele