Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jay T. Scheuer"'
Autor:
Z. Fang, Damien Lenoble, M Juhel, Y Rault, Jay T. Scheuer, J.-P Reynard, F. Lallement, Steven R. Walther, Ludovic Godet, A. Grouillet
Publikováno v:
Surface and Coatings Technology. 186:17-20
As semiconductor devices keep shrinking in size, the fabrication of ultra-shallow junctions (USJ) is becoming a key issue for future CMOS technologies. In this study, we propose for the first time to demonstrate and extensively characterize the capab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a6fdfced34eb61b761ea998e5caf5b
https://doi.org/10.1016/j.surfcoat.2004.04.004
https://doi.org/10.1016/j.surfcoat.2004.04.004
Autor:
F. Lallement, J.-P Reynard, Damien Lenoble, J. Weeman, D Downey, Ludovic Godet, Timothy J. Miller, Z. Fang, A Arevalo, Daniel Distaso, Bon-Woong Koo, Jay T. Scheuer, A. Grouillet
Publikováno v:
Surface and Coatings Technology. 186:57-61
Plasma doping promises superior doping profiles and high productivity relative to traditional beamline ion implantation for future semiconductor device nodes. We present data showing ultra-shallow junction formation using VSEA's Pulsed PLAsma Doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e2273def0aa50ba8d764716254a493
https://doi.org/10.1016/j.surfcoat.2004.04.011
https://doi.org/10.1016/j.surfcoat.2004.04.011
Autor:
David Malcolm Camm, Alexander C. Kontos, J. Gelpey, Jay T. Scheuer, J. Chan, George D. Papasouliotis, Ludovic Godet, Christopher R. Hatem, S. McCoy
Publikováno v:
Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).
As the demand for ever shallower, highly active and abrupt junctions continues, it is important to look at both the doping and activation portions of junction formation as a unit process. Advanced doping is useless without annealing methods that limi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f142bce68369797f3c6abec013908bf7
https://doi.org/10.1109/iwjt.2008.4540023
https://doi.org/10.1109/iwjt.2008.4540023
Publikováno v:
AIP Conference Proceedings.
Decreased energy of halo implants with tighter requirements on beam angle control have driven many lower dose (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45462c8f950766a4c0c9b1d640bde032
https://doi.org/10.1063/1.2401542
https://doi.org/10.1063/1.2401542
Publikováno v:
AIP Conference Proceedings.
Supplying low energy electrons to insure neutralization of implanted wafers requires an advanced charge control system. Some devices are extremely sensitive to low levels of metal contamination. We have designed a radio frequency (rf) plasma flood gu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6ee57e6dc070c4c8af4657124225d34
https://doi.org/10.1063/1.2401552
https://doi.org/10.1063/1.2401552
Autor:
A. Grouillet, Ludovic Godet, B. Duriez, B. Tavel, Jay T. Scheuer, F. Lallement, J. Weeman, Damien Lenoble, Francois Wacquant, M. Woo, P. Stolk, Daniel Distaso, Franck Arnaud, Y. Erokhin
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
N-type and p-type Plasma Doping (PLAD) process have been developed for fabricating the ultra-shallow junctions (USJ) needed for the 65nm CMOS technology. For the first time, the strong benefit of PLAD compared to ultra-low energy implantations for fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8739b0d60825a71d5d23dab0256c98
https://doi.org/10.1109/vlsit.2004.1345465
https://doi.org/10.1109/vlsit.2004.1345465
Autor:
R. Bustin, Anthony Renau, D.L. Smatlak, Jay T. Scheuer, Antonella Cucchetti, R. Sud, J.C. Olson
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
Details of the dosimetry system for the Varian VIISta 810 medium current implanter are described. The system design provides improvements to the VSEA E-series implanters. The wafer scan velocity is variable, allowing a better match of the dose to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f3449ae469d3ed007adb54c546d4b7
https://doi.org/10.1109/iit.2000.924228
https://doi.org/10.1109/iit.2000.924228
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
The design of the VSIIta 810 medium current implanter successfully addresses the needs of advanced semiconductor manufacturing by meeting the challenges of high productivity and reduced defect density. Data are presented verifying that the beamline d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddac07d377b62cf6275edd9cfd0750fe
https://doi.org/10.1109/iit.2000.924181
https://doi.org/10.1109/iit.2000.924181
Autor:
D.L. Smatlak, Rosario Mollica, Anthony Renau, Antonella Cucchetti, J.C. Olson, Daniel Distaso, Jay T. Scheuer
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
An innovative beam tuning algorithm has been developed for the VIISta 810 200/300 mm medium current implanter resulting in decreased tuning times and increased wafer throughput. Pre-calibrated magnets and a recipe-configurable tuning sequence are at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9acca1a1e60f49f9f6561af9f08cae9
https://doi.org/10.1109/iit.2000.924185
https://doi.org/10.1109/iit.2000.924185
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Energy impurities in ion beams can result from dissociation of molecular ions or charge exchange by ions in the beam. Beam energy purity control in high and low energy implantation requires the removal of these unwanted components. Traditionally this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098d76e46c7dff2b8c22ca05f1ff0ca0
https://doi.org/10.1109/iit.1999.812078
https://doi.org/10.1109/iit.1999.812078