Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jay S. Burnham"'
Publikováno v:
Microelectronics Reliability. 45:47-56
In these experiments, we explored various methods of nitridation of thermal oxide. Rapid thermal oxidation (RTO), rapid thermal oxidation with nitric oxide (RTNO), remote plasma nitridation (RPN), and decoupled plasma nitridation (DPN) processes were
Autor:
D. Collins, Andrew H. Simon, M. Stolfi, Donald F. Canaperi, Son Nguyen, Mihaela Balseanu, Deepika Priyadarshini, Stephan A. Cohen, Daniel C. Edelstein, Jay S. Burnham, E. Adams, Griselda Bonilla, Hosadurga Shobha, Timothy M. Shaw, C. Parks, J. Ren, Chenming Hu, Kavita Shah, Alfred Grill, Eric G. Liniger
Publikováno v:
IEEE International Interconnect Technology Conference.
Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality an
Publikováno v:
IBM Journal of Research and Development. 43:393-406
Device characteristics and reliability in a 3.3-V logic CMOS technology with various gate oxidation and nitridation processes are described. The technology was designed to extend 3.3-V devices to the ultimate dielectric reliability limit while mainta
Autor:
Timothy D. Sullivan, Fen Chen, Jay S. Burnham, Kenneth P. Rodbell, E. Adams, P. Pokrinchak, S. Mongeon, Jeff Gambino, Jason Gill
Publikováno v:
MRS Proceedings. 990
In this study, a novel method is explored for improving the electromigration lifetime of Cu wires, using Ta implantation into Cu. For high implant doses (2E15 cm−2), the electromigration lifetime is improved by over 5X using this method. An increas
Autor:
Jason Gill, S. Mongeon, Jay S. Burnham, E. Adams, Timothy D. Sullivan, J. Gambino, Kenneth P. Rodbell, F. Chen
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
In this study, a novel method is explored for improving the electromigration lifetime of Cu wires, using a blanket Ta implantation into both the oxide and Cu on the surface of a wafer. For the highest implant dose, the electromigration lifetime is im
Publikováno v:
SPIE Proceedings.
Existing cleaning technology using sulfuric acid based chemistry has served the mask industry quite well over the years. However, the existence of residue on mask surfaces is becoming more and more of a problem at the high energy wavelengths used in
Publikováno v:
2005 13th International Conference on Advanced Thermal Processing of Semiconductors.
Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray
Autor:
Michael S. Hibbs, Andrew J. Watts, Shahid Butt, Tom Faure, Karen D. Badger, Jed H. Rankin, Jay S. Burnham, David Thibault
Publikováno v:
SPIE Proceedings.
For years there has been a mismatch between the photomask inspection wavelength and the usage conditions. While the non-actinic inspection has been a source for concern, there has been essentially no evidence that a defect "escaped" the mask producti
Publikováno v:
SPIE Proceedings.
As new technologies are developed for smaller linewidths, the specifications for mask cleanliness become much stricter. Not only must the particle removal efficiency increase, but the largest allowable particle size decreases. Specifications for film
Autor:
Jeffrey Riendeau, Louis Kindt, Jason M. Benz, Jay S. Burnham, Christy Johnson, Christopher Magg, Adam C. Smith, R. Kontra
Publikováno v:
SPIE Proceedings.
At the challenging ground rules required for 90 nm and 65 nm photomask production, new types of photomask defects are becoming increasingly prevalent. This paper discusses one particular new defect type found on critical 90 nm embedded attenuated pha