Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jay Curless"'
Autor:
Jay Curless, H. Li, Daniel S. Marshall, K. Eisenbeiser, Yi Wei, Ravindranath Droopad, Yong Liang, Dirk Jordan, K. Moore, B. Craigo, J. Kulik, Jeffrey M. Finder, X. Hu, Corey Overgaard, Peter Fejes, Zhiyi Jimmy Yu
Publikováno v:
Thin Solid Films. :51-56
Direct epitaxy of high-quality perovskite oxides on silicon paves the way for their integration with Si microelectronics. At Motorola Labs, we have achieved heteroepitaxy of high-quality perovskite oxide films and stacks on up to 8-in. Si and silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af6e8c70e3dd92e27e533a4948b91e3
https://doi.org/10.1016/j.tsf.2004.05.088
https://doi.org/10.1016/j.tsf.2004.05.088
Autor:
Xiaodong Zhang, Jay Curless, Yong Liang, Kurt Eisenbeiser, Corey Overgaard, Ravi Droopad, K. Moore, Alexander A. Demkov, Zhiyi Yu, Mike Hu, Jeff Finder, H. Li
Publikováno v:
Journal of Crystal Growth. 251:638-644
Heteroepitaxy of thin films of perovskite type oxides have been demonstrated on silicon (100) substrates by molecular beam epitaxy. RHEED has been used extensively to calibrate the relative fluxes and also to monitor the growing surface and adjust th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0670bed1e865a3688cf3dcdcc424e177
https://doi.org/10.1016/s0022-0248(02)02200-5
https://doi.org/10.1016/s0022-0248(02)02200-5
Autor:
Corey Overgaard, Zhiyi Jimmy Yu, William J. Ooms, Ravi Droopad, Jay Curless, K. Eisenbeiser, Jamal Ramdani, Jeffrey M. Finder, Lyndee L. Hilt, John L. Edwards
Publikováno v:
Materials Science and Engineering: B. 87:292-296
Thin films of perovskite-type oxide SrTiO 3 have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ad165b92386b0377e883b7daf08484
https://doi.org/10.1016/s0921-5107(01)00727-9
https://doi.org/10.1016/s0921-5107(01)00727-9
Autor:
Xiaoming Hu, William J. Ooms, John L. Edwards, Jay Curless, Ravindranath Droopad, K. Eisenbeiser, Dror Sarid, Zhiyi Jimmy Yu
Publikováno v:
Applied Surface Science. 181:103-110
The adsorption of submonolayers and monolayers of strontium and barium on Si(1 0 0) are reported using low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The samples were prepared by deposition at room temperature followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a3fa7752ae12f19d426a8a5f9d2b81
https://doi.org/10.1016/s0169-4332(01)00379-8
https://doi.org/10.1016/s0169-4332(01)00379-8
Autor:
Jay Curless, B-Y Ngyuen, Ravi Droopad, Jamal Ramdani, Jeff Finder, Kurt Eisenbeiser, Jun Wang, B. Ooms, Vidya Kaushik, Zhiyi Yu, Lyndee L. Hilt, John L. Edwards, Corey Overgaard
Publikováno v:
Journal of Crystal Growth. :936-943
Using molecular beam epitaxy, thin films of perovskite-type oxide Sr x Ba 1-x TiO 3 (0 ≤ x ≤ 1) have been grown epitaxially on Si(001) substrates. Growth parameters were determined using reflection high energy electron diffraction (RHEED). Observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60fb05ce2c2bdd1c3f03563db717cf0
https://doi.org/10.1016/s0022-0248(01)00931-9
https://doi.org/10.1016/s0022-0248(01)00931-9
Autor:
Charles A. Peterson, Jamal Ramdani, Xiaoming Hu, Jay Curless, William J. Ooms, Ravi Droopad, Zhiyi Jimmy Yu, Xiaowei Yao, Junling Wang, Daniel S. Marshall, Dror Sarid, J. A. Hallmark
Publikováno v:
Surface Science. 457:L391-L396
The initial stages of barium adsorption on Si(100)-(2×1) at room temperature has been studied by ultrahigh vacuum scanning tunneling microscopy (STM) under both positive and negative sample-bias imaging conditions. Two distinct adsorption sites have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f122a0906a8f6eada3025fcc7169d0
https://doi.org/10.1016/s0039-6028(00)00406-4
https://doi.org/10.1016/s0039-6028(00)00406-4
Autor:
Jamal Ramdani, Vidya Kaushik, Jay Curless, William J. Ooms, Jeffrey M. Finder, Corey Overgaard, S Pietambaram, Zhiyi Jimmy Yu, J. A. Hallmark, K. Eisenbeiser, Ravindranath Droopad, Prasad V. Alluri
Publikováno v:
Applied Surface Science. :127-133
Single-crystal SrTiO3 has been grown on Si(100) using molecular beam epitaxy (MBE). The growth conditions, especially at the initial stage of nucleation, have a great impact on the SrTiO3/Si interface. A regrowth of an amorphous interfacial layer as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93244bf681c193a9731068424eac5cb6
https://doi.org/10.1016/s0169-4332(00)00050-7
https://doi.org/10.1016/s0169-4332(00)00050-7
Publikováno v:
Journal of Physics D: Applied Physics. 33:760-763
We present new results on a single-layer organic alloy light emitting diode. The device shows significant improvement in lifetime at room and elevated temperatures. The improvement is attributed to the elimination of the heterointerface and the minim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::225eb3b2c44550ab8de6e861d5100321
https://doi.org/10.1088/0022-3727/33/7/302
https://doi.org/10.1088/0022-3727/33/7/302
Autor:
Stephen P. Rogers, M. Lent, Franky So, Cynthia Ann Gorsuch Briscoe, V.-E. Choong, M. Kim, Jay Curless, Song Q. Shi
Publikováno v:
Synthetic Metals. 107:53-56
Organic structures consisting of two distinct layers (bilayer), a hole transport layer and an electron transport/emitter layer are compared to structures using a bipolar transport and emitting layer (BTEL). Reverse bias and different duty cycle did n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a29e8cb70452a44cc73a1a0abf2f82d7
https://doi.org/10.1016/s0379-6779(99)00142-3
https://doi.org/10.1016/s0379-6779(99)00142-3
Autor:
Jamal Ramdani, Jeff Finder, Jun Wang, Jay Curless, Corey Overgaard, Ravi Droopad, B. Ooms, J. A. Hallmark, Zhiyi Yu, Daniel S. Marshall
Publikováno v:
Integrated Ferroelectrics. 27:41-50
Recently, we have grown epitaxial BaTiO3 films directly on a Si (001) substrate using molecular beam epitaxy (MBE). The films have been characterized both physically (RHEED, XRD, AFM, SE) and electrically (CV & IV). The films show streaky RHEED patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf69715804020a5e6f9956718f77a544
https://doi.org/10.1080/10584589908228454
https://doi.org/10.1080/10584589908228454