Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Jay A. Switzer"'
Publikováno v:
ACS Applied Materials & Interfaces. 15:18440-18449
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1452c1ca5e0b197ecbe8de16fe9b67b
https://doi.org/10.1021/acsami.2c22983
https://doi.org/10.1021/acsami.2c22983
Autor:
Jay A. Switzer, Avishek Banik
Publikováno v:
Accounts of Chemical Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a41733d50f435d0c489d708bfdfad0
https://doi.org/10.1021/acs.accounts.3c00007
https://doi.org/10.1021/acs.accounts.3c00007
Publikováno v:
Chemistry of Materials. 33:3220-3227
The expansion of future optoelectronic materials into transparent flexible electronics, perovskite, organic, and tandem photovoltaics depends on the development of high-performance p-type materials...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c184534c0d3ea4caf22e7e19d8aa46
https://doi.org/10.1021/acs.chemmater.1c00110
https://doi.org/10.1021/acs.chemmater.1c00110
Publikováno v:
Chemistry of Materials. 32:8367-8372
Highly ordered, epitaxial semiconductor thin films have low defect densities and excellent photophysical properties that are desired for optoelectronic devices. In this work, the epitaxial films of...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c33883092492757567ff6120588cda5c
https://doi.org/10.1021/acs.chemmater.0c02304
https://doi.org/10.1021/acs.chemmater.0c02304
Publikováno v:
The Journal of Physical Chemistry C. 124:21426-21434
Functional self-assembled monolayers (SAMs) of thiols on single-crystal metals provide two-dimensional (2D) soft templates for the highly ordered growth of crystalline materials. An epitaxial Cu(11...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b795ba743780b61101ad2525850dd0cf
https://doi.org/10.1021/acs.jpcc.0c05425
https://doi.org/10.1021/acs.jpcc.0c05425
Publikováno v:
Science. 364:166-169
Epitaxial films through spin coating A simple way to coat a surface with a uniform film is by spin coating. The substrate is spun at high speed, and a droplet of solution containing the coating is added at the center, spreads out, and evaporates. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a9d80e565b47d12a3448293482c7292
https://doi.org/10.1126/science.aaw6184
https://doi.org/10.1126/science.aaw6184
Autor:
Qingzhi Chen, Jay A. Switzer
Publikováno v:
Journal of Materials Chemistry C. 7:1720-1725
Silver films were deposited epitaxially for the first time onto low-index, single-crystal silicon wafers through an electrochemical method in an aqueous silver acetate bath. A negative potential of −2.34 V vs. Hg/Hg2SO4 was used for both pre-polari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73e638be28351d1e4eb315d93c9f9b41
https://doi.org/10.1039/c8tc06002a
https://doi.org/10.1039/c8tc06002a
Publikováno v:
Journal of The Electrochemical Society. 169:092512
Cuprous halides are an important class of wide bandgap p-type semiconductors used in opto-electronics. Cuprous bromide (CuBr) shows potential for short-wavelength devices due to a large exciton binding energy (108 meV) and near-ultraviolet bandgap (3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23955caace1cad78a4ebb850f5e17810
https://doi.org/10.1149/1945-7111/ac8eeb
https://doi.org/10.1149/1945-7111/ac8eeb
Autor:
Caleb M. Hull, Jay A. Switzer
Publikováno v:
ACS Applied Materials & Interfaces. 10:38596-38602
A two-step potential electrodeposition technique is described which gives epitaxial films of Cu(100) on n-Si(100). Nucleation of epitaxial seeds occurs at -1.5 VAg/AgCl, whereas the film is grown at -0.5 VAg/AgCl. Cu deposition occurs with a Faradaic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab4854e88234f774e274b3355493f822
https://doi.org/10.1021/acsami.8b13188
https://doi.org/10.1021/acsami.8b13188
Autor:
Avishek Banik, Jay A. Switzer
Publikováno v:
ECS Meeting Abstracts. :634-634
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d5cc15029acbec7ded2a05c85b4fc1
https://doi.org/10.1149/ma2021-0213634mtgabs
https://doi.org/10.1149/ma2021-0213634mtgabs