Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Jaw-Jung Shin"'
Publikováno v:
Alternative Lithographic Technologies VII.
In E-beam lithography, the double or multiple Gaussian kernels used to describe the electron scattering behavior have been discussed extensively for critical dimensions (CDs) larger than the e-beam blur size. However in e-beam direct write on wafer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42bdfc47c2cb5f4017e509b194399b78
https://doi.org/10.1117/12.2085099
https://doi.org/10.1117/12.2085099
Autor:
Shy-Jay Lin, Luca Grella, T. P. Wang, William M. Tong, Jaw-Jung Shin, Mark A. McCord, Paul Petric, Allen Carroll, Wen-Chuan Wang, Kirk Murray, Tsung-Hsin Yu, Christopher F. Bevis, Tze-Chiang Huang
Publikováno v:
SPIE Proceedings.
Reflective electron-beam lithography (REBL) employs a novel device to impress pattern information on an electron beam. This device, the digital pattern generator (DPG), is an array of small electron reflectors, in which the reflectance of each mirror
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f29216a9d23d5afd41103ff304cd190
https://doi.org/10.1117/12.2048528
https://doi.org/10.1117/12.2048528
Autor:
Shy-Jay Lin, Allen Carroll, Alan D. Brodie, Luca Grella, Tsung-Chih Chien, Burn Jeng Lin, Jaw-Jung Shin, Tien-I Bao, Shih-Chi Wang, Chih Wei Lu, Mark A. McCord
Publikováno v:
SPIE Proceedings.
KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL), targeted as a production worthy multiple electron beam tool for next generation high volume lithography. The Digital Pattern Generator (DPG) integrated with CMOS and MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5bd98a0c67f5afede178fb276ce613
https://doi.org/10.1117/12.2045416
https://doi.org/10.1117/12.2045416
Autor:
Jaw-Jung Shin, Burn Jeng Lin, Shy-Jay Lin, Wen-Chuan Wang, Tsung-Chih Chien, Pei-Yi Liu, Cheng-Hung Chen
Publikováno v:
SPIE Proceedings.
Electron beam lithography is a promising technology for next generation lithography. Compared to optical lithography, it has better pattern fidelity and larger process window. However, the proximity effect caused by the electron forward scattering an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684f0dadff678930793759b8f4f3c233
https://doi.org/10.1117/12.2029180
https://doi.org/10.1117/12.2029180
Autor:
Jaw-Jung Shin, Cheng-Hung Chen, Shriyan Sameet K, Burn Jeng Lin, Shy-Jay Lin, Wen-Chuan Wang, Mark A. McCord, Pei-Yi Liu
Publikováno v:
Alternative Lithographic Technologies V.
Multiple e-beam direct write lithography (MEBDW), using >10,000 e-beams writing in parallel, proposed by MAPPER, KLA-Tencor, and IMS is a potential solution for 20-nm half-pitch and beyond. The raster scan in MEBDW makes bitmap its data format. Data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c60978735093a2b3237f0cbc61862f7a
https://doi.org/10.1117/12.2010865
https://doi.org/10.1117/12.2010865
Publikováno v:
Applied Physics Letters. 72:2808-2810
We report the observation of a μm range periodical modulation of a band gap caused by gratinglike quantum well intermixing in an intrinsic GaAs/AlGaAs quantum well structure. The intermixing grating was formed with the irradiation of the interferenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b427867aa55e2a5643af1b6980cb2ea
https://doi.org/10.1063/1.121465
https://doi.org/10.1063/1.121465
Novel 20nm hybrid SOI/bulk CMOS technology with 0.183μm/sup 2/ 6T-SRAM cell by immersion lithography
Autor:
null Hou-Yu Chen, null Chang-Yun Chang, null Chien-Chao Huang, null Tang-Xuan Chung, null Sheng-Da Liu, null Jiunn-Ren Hwang, null Yi-Hsuan Liu, null Yu-Jun Chou, null Hong-Jang Wu, null King-Chang Shu, null Chung-Kan Huang, null Jan-Wen You, null Jaw-Jung Shin, null Chun-Kuang Chen, null Chia-Hui Lin, null Ju-Wang Hsu, null Bao-Chin Perng, null Pang-Yen Tsai, null Chi-Chun Chen, null Jyu-Horng Shieh, null Han-Jan Tao, null Shih-Chang Chen, null Tsai-Sheng Gau, null Fu-Liang Yang
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
For the first time, a novel hybrid SOI/bulk CMOS technology with 20nm gate length and low-leakage 1.3nm thick SiON gate dielectric has been developed for advanced SOC applications. 26% (for N-FET) and 35% (for P-FET) improvements of intrinsic gate de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6438477da572f34e824ad8a96c84a7
https://doi.org/10.1109/.2005.1469194
https://doi.org/10.1109/.2005.1469194
Autor:
Jan-Wen You, Fu-Jye Liang, Chun-Kuang Chen, Tsai-Sheng Gau, King-Chang Shu, Chun-Heng Lin, Zhin-Yu Pan, Jaw-Jung Shin, Burn Jeng Lin
Publikováno v:
SPIE Proceedings.
We propose a useful methodology, called phase-defocus (P-D) window, to express the mutual dependence of Alt-PSM mask structure and the wafer process window of the pattern-position shift caused by phase error and intensity imbalance. The P-D window wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a01fd23d89474c98e750d8879888a94
https://doi.org/10.1117/12.569216
https://doi.org/10.1117/12.569216
Autor:
King-Chang Shu, Burn Jeng Lin, Jaw-Jung Shin, Lin-Hung Shiu, Jan-Wen You, Bin-Chang Chang, Tsai-Sheng Gau, Shuo-Yen Chou
Publikováno v:
SPIE Proceedings.
This paper presented an integrated simulation framework linking our in-house mask writer simulator and the optical lithography simulation engines to include the mask corner rounding effect in lithographic performance evaluations. In the writer simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb700194a58823202341fe389d05237
https://doi.org/10.1117/12.557745
https://doi.org/10.1117/12.557745
Autor:
Li-Jui Chen, Burn-Jeng Lin, Chi-Chuang Lee, Jaw-Jung Shin, Anthony Yen, Tsai-Sheng Gau, Chun-Kuang Chen
Publikováno v:
SPIE Proceedings.
The concept of system invariance is the principle of scaling law in optical lithography. Both the conservation of the intensity threshold of the aerial image and the invariant pupil filling of the diffracted light with the normalized numerical apertu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50dfecde1fab96adea9327bb97fa225b
https://doi.org/10.1117/12.536667
https://doi.org/10.1117/12.536667