Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Javier de la Hidalga Wade"'
Publikováno v:
IEEE Latin America Transactions. 20:108-116
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9023538bd65bc13c18826d4e99215311
https://doi.org/10.1109/tla.2022.9662179
https://doi.org/10.1109/tla.2022.9662179
Autor:
Andres Felipe Jaramillo Alvarado, Francisco Javier De la Hidalga Wade, Pedro Rosales Quintero, Alfonso Torres Jacome
Publikováno v:
Revista Mexicana de Física. 68
The requirements of high quality factor, low power consumption, easy design techniques and compatibility with the main standard fabrication processes of integrated circuits (IC) make the tunable piezoelectric resonators a suitable option for the new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d609ceb78c16ba7525c4b21bd9cbaea
https://doi.org/10.31349/revmexfis.68.061002
https://doi.org/10.31349/revmexfis.68.061002
Autor:
Carlos Alberto Sanabria Diaz, Rogelio M. Higuera Gonzalez, Mónico Linares Aranda, F. Javier De la Hidalga Wade
Publikováno v:
LASCAS
The new interest in high frequency applications such as 5G and mmWaves have increased the design requirement for the integrated circuits, specifically for the signal generation and base-band processing stages. The Rotary Traveling Wave Oscillator (RT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97e16c2516118bced008eed42bd8f7b8
https://doi.org/10.1109/lascas45839.2020.9069005
https://doi.org/10.1109/lascas45839.2020.9069005
Autor:
Carlos Alberto Sanabria Diaz, Mónico Linares Aranda, Luis Hernández Martínez, Francisco Javier De la Hidalga Wade
Publikováno v:
Microelectronics Journal. 110:105017
In this work, the impact of the parasitic effects caused by discontinuities on Resonant Rotary Traveling Wave Oscillators (RTWO) for RF-CMOS applications, is analyzed and modeled. By using experimental data in addition to the full wave representation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34dc310b379092c05d9e3602b6a2a71c
https://doi.org/10.1016/j.mejo.2021.105017
https://doi.org/10.1016/j.mejo.2021.105017
Publikováno v:
Crystal Research and Technology. 50:516-521
A comparison of the properties between Tin-doped Indium Oxide (ITO) films fabricated by sputtering and spray pyrolysis is presented. This analysis shows that the ITO films fabricated by DC magnetron sputtering in pure argon gas requires of a subseque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4353fd85ab2269eb9779a6bd845d843f
https://doi.org/10.1002/crat.201400464
https://doi.org/10.1002/crat.201400464
Publikováno v:
Journal of Materials Research. 30:1894-1901
We report on the study of the characteristics of indium–tin oxide (ITO) films prepared by well-controlled and reproducible DC magnetron sputtering in argon with consequent annealing in oxygen atmosphere. The structural, electrical, and optical prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88fa04170a4735892ddc1eeb9efed63e
https://doi.org/10.1557/jmr.2015.159
https://doi.org/10.1557/jmr.2015.159
Publikováno v:
Journal of Materials Research. 30:2040-2045
Fluorine-doped tin oxide (FTO) thin films were deposited by spray pyrolysis in a pulse mode at 450 °C on glass substrates, using an alcoholic solution of SnCl4·5H2O and NH4F with different F/Sn ratios in the precursor solution. The film structure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1903d76603aa1db469c9e72dd4e734
https://doi.org/10.1557/jmr.2015.138
https://doi.org/10.1557/jmr.2015.138
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P377-P379
Properties of low-threshold silicon p-MOS capacitors with tin-doped indium oxide (ITO) gates have been investigated. A shift of the capacitance-voltage (C-V) characteristics after annealing the capacitors in an oxygen atmosphere was observed. An anom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fbcaed7ec55d8af5576643d976db6da
https://doi.org/10.1149/2.0011607jss
https://doi.org/10.1149/2.0011607jss
Publikováno v:
Optoelectronics-Advanced Device Structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd08694347c10145d5d16e15bfb60234
https://doi.org/10.5772/67469
https://doi.org/10.5772/67469
