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Akademický článek

Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells

Autor: Eric García-Hemme, Rodrigo García-Hernansanz, Javier Olea, David Pastor, Álvaro del Prado, Ignacio Mártil, Perla Wahnón, Kefrén Sanchez, Pablo Palacios, Germán González-Díaz

Publikováno v: International Journal of Photoenergy, Vol 2013 (2013)

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based

Externí odkaz: https://doaj.org/article/1869e31cc0d34944bffcabd8766f0785

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High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells

Autor: Javier Olea, Gloria Patricia Moreno, David Pastor, Francisco Zenteno, R. García-Hernansanz, D. Caudevilla, Eric García Hemme, Enrique San Andrés, Rocio Barrio, S. Algaidy, I. Torres, Álvaro del Prado

Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname

In this work we have explored the growth by high pressure sputtering (HPS) of materials intended for novel selective contacts for photovoltaic cells. This technique shows promise for the low-damage low-temperature deposition of PV materials. We studi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbd7363a4a525f3298677a6bc59ae63f
https://eprints.ucm.es/id/eprint/68224/1/Paper_CDE_FINAL_ESAS.pdf

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Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization

Autor: David Pastor, D. Caudevilla, R. García-Hernansanz, F. Zenteno, E. García-Hemme, S. Algaidy, Yonder Berencén, E. San Andrés, A. del Prado, Javier Olea

Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname

Germanium hyperdoped with deep level donors, such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a combination of non-equilibrium techniques to supersaturate Ge with Te via ion implanta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::202662920666fccec05a1130e7070c25

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AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

Autor: Alba Díaz-Lobo, R. Blasco, Fernando B. Naranjo, S. Valdueza-Felip, A.F. Braña, Javier Olea

Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname
Materials, Vol 13, Iss 2336, p 2336 (2020)
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Biblos-e Archivo: Repositorio Institucional de la UAM
Universidad Autónoma de Madrid
Materials
Volume 13
Issue 10
Biblos-e Archivo. Repositorio Institucional de la UAM
Consejo Superior de Investigaciones Científicas (CSIC)

We investigate the photovoltaic performance of solar cells based on n-AlxIn1&minus
xN (x = 0&ndash
0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1&minus
xN layers own an optical bandgap absorpti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b5dfb2cf0544fa10fd9e61cec906350
https://doi.org/10.3390/ma13102336

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Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells

Autor: A. del Prado, E. García-Hemme, Javier Olea, David Pastor, F. Pérez-Zenteno, D. Caudevilla, S. Algaidy, R. García-Hernansanz, R. Barrio, E. San Andrés, I. Torres

Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname

This article studies the physical and electrical behavior of indium tin oxide layers (ITO) grown by an unconventional technique: High Pressure Sputtering (HPS), from a ceramic ITO target in a pure Ar atmosphere. This technique has the potential to re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83680e5bfdfa1a01d8060fc1d9f20b88
https://doi.org/10.1016/j.mssp.2021.106189

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On the properties of GaP supersaturated with Ti

Autor: Esther Soria, E. García-Hemme, A. del Prado, D. Montero, D. Caudevilla, S. Algaidy, José Gonzalo, R. García-Hernansanz, Germán González-Díaz, Javier Olea

Publikováno v: E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
E-Prints Complutense. Archivo Institucional de la UCM
instname
Digital.CSIC. Repositorio Institucional del CSIC

8 pags., 7 figs., 2 tabs.
We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photocondu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62a5878617ade044a5054e10bf428ad2
http://hdl.handle.net/10261/223059

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On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes

Autor: D. Caudevilla, R. García-Hernansanz, Álvaro del Prado, S. Algaidy, Francisco Pérez‐Zenteno, E. García-Hemme, Javier Olea, Enrique San Andrés, Germán González-Díaz, Ignacio Mártil, David Pastor

Publikováno v: Advanced Electronic Materials. 8:2100788

This work deepens the understanding of the optoelectronic mechanisms ruling hyperdoped-based photodevices and shows the potential of Ti hyperdoped-Si as a fully complementary metal-oxide semiconductor compatible material for room-temperature infrared

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b8020208d8ac66d82f9dab45c0a6347
https://doi.org/10.1002/aelm.202100788

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A robust method to determine the contact resistance using the van der Pauw set up

Autor: E. San Andrés, E. García-Hemme, A. del Prado, Ignacio Mártil, David Pastor, R. García-Hernansanz, D. Montero, Germán González-Díaz, Javier Olea

Publikováno v: E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
E-Prints Complutense. Archivo Institucional de la UCM
instname

The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the infl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5202969ee5c298cb8b4e77e4f0c6d21b
https://doi.org/10.1016/j.measurement.2016.11.040

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High quality Al$_{0.37}$In$_{0.63}$N layers grown at low temperature (<300$^\circ$C) by radio-frequency sputtering

Autor: S. Valdueza-Felip, Javier Olea, D. Montero, Fernando B. Naranjo, A. Núñez-Cascajero, R. Blasco

Publikováno v: E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
E-Prints Complutense. Archivo Institucional de la UCM
instname

High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300 degrees C). Their structural, chemical and optical properties are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27a85c5ce822a011b10d4a0ca627bfef
http://arxiv.org/abs/1909.12068

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Low‐to‐Mid Al Content ( x = 0–0.56) Al x In 1− x N Layers Deposited on Si(100) by Radio‐Frequency Sputtering

Autor: Michael Sun, S. Valdueza-Felip, Javier Olea, D. Montero, R. Blasco, Fernando B. Naranjo

Publikováno v: physica status solidi (b). 257:1900575

Radio frequency sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here we study the effect of the Al mole fraction x from 0 to 0.56 on the structural, mo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2c18be811b066413aa77127bfbf83ae
https://doi.org/10.1002/pssb.201900575

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