Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Javier Miguel-Sánchez"'
Autor:
Javier Miguel-Sánchez, Andreas Reinhard, Emre Togan, Thomas Volz, Atac Imamoglu, Benjamin Besga, Jakob Reichel, Jérôme Estève
Publikováno v:
New Journal of Physics, Vol 15, Iss 4, p 045002 (2013)
We demonstrate non-perturbative coupling between a single self-assembled InGaAs quantum dot and an external fiber-mirror-based microcavity. Our results extend the previous realizations of tunable microcavities while ensuring spatial and spectral over
Externí odkaz:
https://doaj.org/article/3cbedb69c03b44ddb545a261d06e9582
Publikováno v:
Nature Communications
Nature Communications, 8
Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
Nature Communications, 8
Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
Neutral particles subject to artificial gauge potentials can behave as charged particles in magnetic fields. This fascinating premise has led to demonstrations of one-way waveguides, topologically protected edge states and Landau levels for photons.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8168542fbb2a0d1969f18781f379735
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1371-1374
We demonstrate resonant excitation of a semiconductor quantum dot embedded in a p-i-n diode structure in and out of a photonic crystal cavity. We investigate the modification of the spontaneous emission rate and the photon collection efficiency of qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eb5fc9bae2843db747998ce3b5a2c7f
https://doi.org/10.1109/jqe.2011.2164898
https://doi.org/10.1109/jqe.2011.2164898
Autor:
Jean-Yves Duboz, Jean Massies, M. Al Khalfioui, Benjamin Damilano, Miguel Montes Bajo, Maxime Hugues, Javier Miguel-Sánchez, Adrian Hierro, JM José Maria Ulloa, A. Guzmán
Publikováno v:
IEEE Journal of Quantum Electronics. 46:1058-1065
The role of the current spreading efficiency, ?s, on the degradation of the figures of merit of stripe geometry GaInNAs-GaAs quantum well (QW) laser diodes (LDs) is studied as a function of the N content in the range from 0 to 3.3%. It is found that,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f240966a53a3424831bddaccf0a48a6d
https://doi.org/10.1109/jqe.2010.2043219
https://doi.org/10.1109/jqe.2010.2043219
Autor:
Jérôme Estève, Cyril Vaneph, Benjamin Besga, Thomas Volz, Javier Miguel-Sánchez, Jakob Reichel, Atac Imamoglu, Andreas Reinhard
Publikováno v:
Physical Review Applied. 3
Cavity polaritons are elementary half-matter, half-light excitations trapped within a microcavity that exhibit unique properties useful both for probing fundamental physics and for producing novel applications. The authors present an all-optical conf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b49b47d93a3e933422caaa33d40d26f
https://doi.org/10.1103/physrevapplied.3.014008
https://doi.org/10.1103/physrevapplied.3.014008
Publikováno v:
Microelectronics Journal. 37:1552-1556
The structural characterization of hole patterns on GaAs cap layers grown on GaInNAs quantum wells (QWs) created by rapid thermal annealing is shown in this work. The effect of annealing temperature on the hole size, as well as the impact of the ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a4139776aeb64e5acb2d63d92594183
https://doi.org/10.1016/j.mejo.2006.05.021
https://doi.org/10.1016/j.mejo.2006.05.021
Publikováno v:
Microelectronics Journal. 37:1442-1445
We have grown by Molecular Beam Epitaxy GaInNAs/GaAs (111)B quantum wells (QWs) embedded in p-i-n diode and laser diode structures. The impact of the different growth parameters (As flux, growth temperature, growth rate, ion density) on the optical a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7e10d6b262d7572def9e34f090803b
https://doi.org/10.1016/j.mejo.2006.05.005
https://doi.org/10.1016/j.mejo.2006.05.005
Publikováno v:
physica status solidi c. 3:627-630
We have directly measured the carrier diffusion length Ld of dilute nitride single quantum wells (QWs) by means of spatially resolved cathodoluminescence (CL) spectroscopy as a function of the CL detection energy (E ) for different temperatures. Whil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d02e23a0f931cda7a89fea4dc6a8184f
https://doi.org/10.1002/pssc.200564131
https://doi.org/10.1002/pssc.200564131
Publikováno v:
Journal of Crystal Growth. 278:234-238
In this work we present the GaAs (1 1 1)B as a candidate to develop laser devices working on the second and third fiber optic windows. We show that the ions coming from the radiofrequency plasma cell reduce the optical emission dramatically. This dam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7617232f36d40c43b3090fa51bdc21d
https://doi.org/10.1016/j.jcrysgro.2004.12.068
https://doi.org/10.1016/j.jcrysgro.2004.12.068
Publikováno v:
IEE Proceedings - Optoelectronics. 151:305-308
The advantages of the InGaAsN/GaAs system comprising the active layers of single- and multi-quantum well laser diodes (emission wavelengths in the second and third optical windows, AlGaAs reflectors etc.), in comparison with other materials, make thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a1b57899aa85d6c16e8efce7eb4047a
https://doi.org/10.1049/ip-opt:20040910
https://doi.org/10.1049/ip-opt:20040910