Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jaung-Joo Kim"'
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, a study on a behavior of waiting-time related defect which strongly depends on a wafer slot position in FOUP (Front Opening Unified Pod) was carried out. The occurrence of the waiting-time dependent defects in the processing tools was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8040cdd676069062405b2468df4e399
https://doi.org/10.1109/asmc.2019.8791794
https://doi.org/10.1109/asmc.2019.8791794
Autor:
Taesung Kim, Hoomi Choi, Jaung-Joo Kim, Ji Chul Yang, Sang Won Lee, M.S. Oh, Soo-Chul Lee, Jinsung Kim
Publikováno v:
Thin Solid Films. 521:201-205
Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources. The majority of the defect is caused by synthesized nano-materials in the process chamber. So analysis and removal of these nano-mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::defded9bb31d20502e3fdeba9e373e04
https://doi.org/10.1016/j.tsf.2011.11.084
https://doi.org/10.1016/j.tsf.2011.11.084
Publikováno v:
ECS Transactions. 25:225-231
Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources. In this paper, generation of typical defect during dichlorosilane-based WSi2 deposition process is systematically evaluated. The root
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f427f1f1f3c7621a9c66772ba2351f
https://doi.org/10.1149/1.3204410
https://doi.org/10.1149/1.3204410
Autor:
Woo-Tag Kang, Kim Taeyeong, Jaung-Joo Kim, Kyoung-won Lee, Junekyun Park, Young-Chul Shin, Kweonjae Lee, Yu-Sun Park
Publikováno v:
Thin Solid Films. 352:128-132
The delamination of W/TiN/Ti(Co) based metal lines was investigated. The adhesion failure was mostly induced by the formation of an interfacial layer between metal liner and inter-layer-dielectric (ILD) oxide. This interfacial layer could be a TiF x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4620a05f2f245b1d8fd67a22df1fae
https://doi.org/10.1016/s0040-6090(99)00330-2
https://doi.org/10.1016/s0040-6090(99)00330-2