Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jau-Jiun Chen"'
Autor:
Brent P. Gila, M. Hlad, Jau-Jiun Chen, Stephen J. Pearton, Fan Ren, A. P. Gerger, C. R. Abernathy
Publikováno v:
Journal of Electronic Materials. 36:368-372
MgCaO offers promise as a gate dielectric for GaN-based metal-oxide-semiconductor (MOS) transistors, particularly in combination with environmentally stable capping layers such as Sc2O3. X-ray photoelectron spectroscopy (XPS) was used to measure the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b159043e841402b4694b50c5711730c3
https://doi.org/10.1007/s11664-006-0037-9
https://doi.org/10.1007/s11664-006-0037-9
Autor:
Hyun-Sik Kim, David P. Norton, S. Rawal, Fan Ren, Stephen J. Pearton, Yuanjie Li, Andrei Osinsky, Soohwan Jang, Jau-Jiun Chen
Publikováno v:
Applied Surface Science. 253:746-752
The specific contact resistivity and chemical intermixing of Ti/Au and Ti/Al/Pt/Au Ohmic contacts on n-type Zn 0.05 Cd 0.95 O layers grown on ZnO buffer layers on GaN/sapphire templates is reported as a function of annealing temperature in the range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f319eee6f06b92ee3a3f29543bae6f
https://doi.org/10.1016/j.apsusc.2006.01.012
https://doi.org/10.1016/j.apsusc.2006.01.012
Autor:
B. S. Kang, Kimberly Allums, Fan Ren, Steve Pearton, Soohwan Jang, Andrew M. Herrero, M. Hlad, Jau-Jiun Chen, Andrew Gerger, Brent P. Gila, Travis J. Anderson, Cammy R. Abernathy
Publikováno v:
ECS Transactions. 3:141-150
Dielectric oxides of scandium and magnesium have been employed as a surface passivation on AlGaN/GaN HEMT devices. Research to discover a lower lattice mismatch oxide to further reduce the interface trap density and increase oxide/nitride stability h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8e8be72893a77eb49fab31ec07e0c6a
https://doi.org/10.1149/1.2357204
https://doi.org/10.1149/1.2357204
Autor:
David Norton, S. N. G. Chu, Soohwan Jang, Brent P. Gila, J. W. Dong, Andrei Osinsky, S. Rawal, Travis J. Anderson, Jau-Jiun Chen, Stephen J. Pearton, Yuanjie Li, Hyun-Sik Kim, Ren Fan
Publikováno v:
ECS Transactions. 2:153-172
To create efficient ZnO-based LEDs, it is important to develop practical etching process and optimize Ohmic contacts on ZnO. Wet etch rates at 25{degree sign}C for Zn0.95Cd0.05O grown on sapphire substrates by rf plasma-assisted molecular beam epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d135d7535d9451518981a8e3cfb482
https://doi.org/10.1149/1.2204888
https://doi.org/10.1149/1.2204888
Autor:
Soohwan Jang, Hyun-Sik Kim, David P. Norton, Stephen J. Pearton, Yuanjie Li, S. N. G. Chu, Jason F. Weaver, Jau-Jiun Chen, Andrei Osinsky, Fan Ren
Publikováno v:
Journal of Electronic Materials. 35:516-519
Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 nm · min−1 with H3PO4/H2O (5×10−3−2×10−2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac055972164fb6add7040ac69a30b219
https://doi.org/10.1007/s11664-006-0092-2
https://doi.org/10.1007/s11664-006-0092-2
Publikováno v:
Surface Science. 592:83-103
The oxidation of Pt(1 1 1) by gas-phase oxygen atoms was investigated in ultrahigh vacuum using temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS) and low energy electron diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17917f6f43172d84e2764bb1a8c72bc7
https://doi.org/10.1016/j.susc.2005.07.010
https://doi.org/10.1016/j.susc.2005.07.010
Autor:
J. Berstein, Kevin S. Jones, Knut Möller, M. Puga-Lambers, B. Freer, Jau-Jiun Chen, Leonard M. Rubin
Publikováno v:
Journal of Applied Physics. 81:6051-6055
Si wafers were preamorphized by either Si+ or Ge+ ions at temperatures between 5 and 40 °C. The diffusion of low energy (4 keV) B+ implants into the preamorphized Si was studied in order to monitor the flux of interstitials from the end of range (EO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92f8f4449c862a4f00637c66ff80ead8
https://doi.org/10.1063/1.364391
https://doi.org/10.1063/1.364391
Publikováno v:
The journal of physical chemistry. B. 109(16)
The nitridation of Si(100) by ammonia and the subsequent oxidation of the nitrided surface by both gaseous atomic and molecular oxygen was investigated under ultrahigh vacuum (UHV) conditions using X-ray photoelectron spectroscopy (XPS). Nitridation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662c9f382f5df9c812373baac80b38ec
https://pubmed.ncbi.nlm.nih.gov/16851937
https://pubmed.ncbi.nlm.nih.gov/16851937
Autor:
S.S. Li, Valentin Craciun, S. Yoon, Fan Ren, Woo Kyoung Kim, Jiyon Song, Timothy J. Anderson, Oscar D. Crisalle, Jihyun Kim, Jau-Jiun Chen
Publikováno v:
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..
In this paper we report the study of CdZnS thin films grown on the soda-lime glass (SLG) substrates by chemical bath deposition (CBD) process for buffer layer applications in CuGaSe/sub 2/ (CGS) solar cells. Structural, surface morphology, optical, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1ed389ad29b50bb4730377eb1926e2
https://doi.org/10.1109/pvsc.2005.1488166
https://doi.org/10.1109/pvsc.2005.1488166
Autor:
H.J. Miller, Knut Möller, E. Heitman, Daniel F. Downey, R. Brindos, M. Wright, Kevin S. Jones, Mark E. Law, J. Glassberg, J. Chow, Lance S. Robertson, Jau-Jiun Chen, M. Puga-Lambers
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
As/sup +/ implanted Si has been investigated using a combination of SIMS, TEM and chemical mechanical polishing (CMP). As the energy decreases from 5 to 3 keV it is found that no extended defects form in the EOR region upon 750/spl deg/C annealing or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250d382ac6c1e88a15143ee462d9a7e9
https://doi.org/10.1109/iit.1998.813799
https://doi.org/10.1109/iit.1998.813799