Zobrazeno 1 - 10
of 122
pro vyhledávání: '"Jaswal, S. S."'
Autor:
Wang, Y., Niranjan, M. K., Janicka, K., Velev, J. P., Zhuravlev, M. Ye., Jaswal, S. S., Tsymbal, E. Y.
Publikováno v:
Phys. Rev. B 82, 094114 (2010)
Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the
Externí odkaz:
http://arxiv.org/abs/1004.2414
Autor:
Velev, Julian P., Duan, Chun-Gang, Burton, J. D., Smogunov, Alexander, Niranjan, Manish K., Tosatti, Erio, Jaswal, S. S., Tsymbal, Evgeny Y.
Publikováno v:
Nano Letters 9, 427-432 (2009)
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demon
Externí odkaz:
http://arxiv.org/abs/0812.2393
Autor:
Duan, Chun-Gang, Velev, Julian P., Sabirianov, R. F., Zhu, Ziqiang, Chu, Junhao, Jaswal, S. S., Tsymbal, E. Y.
A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of t
Externí odkaz:
http://arxiv.org/abs/0808.0841
Magnetic moments in atomic scale domain walls formed in nanoconstrictions and nanowires are softened which affects dramatically the domain wall resistance. We perform ab initio calculations of the electronic structure and conductance of atomic-size N
Externí odkaz:
http://arxiv.org/abs/cond-mat/0601662
Autor:
Tsymbal, E. Y., Belashchenko, K. D., Velev, J. P., Jaswal, S. S., van Schilfgaarde, M., Oleynik, I. I., Stewart, D. A.
Publikováno v:
Progress in Materials Science, 52, 401 (2007)
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs
Externí odkaz:
http://arxiv.org/abs/cond-mat/0511663
Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We s
Externí odkaz:
http://arxiv.org/abs/cond-mat/0506263
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charge
Externí odkaz:
http://arxiv.org/abs/cond-mat/0502109
Publikováno v:
Phys. Rev. Lett. 94, 127203 (2005)
Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412637
Autor:
Belashchenko, K. D., Tsymbal, E. Y., van Schilfgaarde, M., Stewart, D. A., Oleynik, I. I., Jaswal, S. S.
Publikováno v:
Phys. Rev. B 69, 174408 (2004).
We demonstrate that the factorization of the tunneling transmission into the product of two surface transmission functions and a vacuum decay factor allows one to generalize Julliere's formula and explain the meaning of the ``tunneling density of sta
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308268
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2011 Aug . 369(1948), 3069-3097.
Externí odkaz:
https://www.jstor.org/stable/23035864
