Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jasper Bizindavyi"'
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics.
Externí odkaz:
https://doaj.org/article/5e1bcda7f5bf4432b6d182bb7babf59f
Autor:
Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 633-641 (2018)
Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-
Externí odkaz:
https://doaj.org/article/86d17f8e8f43468eb80f4139ffe8fbdf
Autor:
Sumi Lee, Nicolò Ronchi, Jasper Bizindavyi, Mihaela I. Popovici, Kaustuv Banerjee, Amey Walke, Romain Delhougne, Jan Van Houdt, Changhwan Shin
Publikováno v:
IEEE Transactions on Electron Devices. 70:2568-2574
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::600cd16025e006d400414a93afb4b0d9
https://doi.org/10.1109/ted.2023.3254509
https://doi.org/10.1109/ted.2023.3254509
Autor:
Sou-Chi Chang, Kisung Chae, Mihaela I. Popovici, Chia-Ching Lin, Saima Siddiqui, I-Cheng Tung, Jasper Bizindavyi, Bernal Granados Alpizar, Nazila Haratipour, Matthew Metz, Jack Kavalieros, Gouri S. Kar, Andrew Kummel, Kyeongjae Cho, Uygar E. Avci
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07937a3b38d874c2de7ac79b087a3ba5
https://doi.org/10.1109/iedm45625.2022.10019540
https://doi.org/10.1109/iedm45625.2022.10019540
Autor:
Mihaela Ioana Popovici, Amey M. Walke, Jasper Bizindavyi, Johan Meersschaut, Kaustuv Banerjee, Goedele Potoms, Kostantine Katcko, Geert Van den Bosch, Romain Delhougne, Gouri Sankar Kar, Jan Van Houdt
ispartof: ACS APPLIED ELECTRONIC MATERIALS vol:4 issue:4 pages:1823-1831 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::155bbb4e3a747779ef7481e979ca16e8
https://lirias.kuleuven.be/handle/20.500.12942/698970
https://lirias.kuleuven.be/handle/20.500.12942/698970
Autor:
Shankha Mukherjee, Jasper Bizindavyi, Sergiu Clima, Mihaela I. Popovici, Xiaoyu Piao, Kostantine Katcko, Francky Catthoor, Shimeng Yu, Valeri V. Afanas’ev, Jan Van Houdt
Publikováno v:
IEEE Electron Device Letters. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be025c84ba916cc28dfc82447249ee5c
https://doi.org/10.1109/led.2023.3278599
https://doi.org/10.1109/led.2023.3278599
Publikováno v:
Communications Physics
Communications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
Communications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
At the core of the theoretical framework of the ferroelectric field-effect transistor (FeFET) is the thermodynamic principle that one can determine the equilibrium behavior of ferroelectric (FERRO) systems using the appropriate thermodynamic potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ca53e5f62a3c7058a4b5a5a0b560d08
https://hdl.handle.net/10067/1790050151162165141
https://hdl.handle.net/10067/1790050151162165141
Publikováno v:
IEEE transactions on electron devices
To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3d55709968591620815aeac99ddab8
https://lirias.kuleuven.be/handle/123456789/659249
https://lirias.kuleuven.be/handle/123456789/659249
Autor:
S. R. C. McMitchell, Michel Houssa, Sergiu Clima, Jasper Bizindavyi, Jan Van Houdt, Christopher Pashartis, Geoffrey Pourtois
Publikováno v:
Applied physics letters
Density functional theory predicts an abrupt drop in the stability, in the kinetic barrier for polarization reversal and spontaneous polarization of a ScxAl1-xN wurtzite phase, when the Sc:Al ratio approaches 50:50. The same effect is obtained by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa843d1a9aebc33327e5589848431681
https://doi.org/10.1063/5.0072138
https://doi.org/10.1063/5.0072138
Publikováno v:
DRC
The capability to achieve sub-60 mV / dec subthreshold swings through quantum mechanical (QM) band-to-band tunneling (BTBT) has established the tunnel field-effect transistor (TFET) as an important candidate to drive future ultra-low power logic appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50eedb5ab03e4a656183e2c4a5771975
https://doi.org/10.1109/drc46940.2019.9046474
https://doi.org/10.1109/drc46940.2019.9046474