Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jason W. Boucher"'
Autor:
Christopher J. Funch, Shannon W. Boettcher, Ann L. Greenaway, Alex Welsh, Shaul Aloni, Robert Weiss, Jason W. Boucher
Publikováno v:
Journal of Crystal Growth. 506:147-155
Low-cost methods of III-V deposition are an important component of making high-efficiency III-V solar cells cost-competitive for terrestrial applications. Here, we report the design and testing of a close-spaced vapor transport system for the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309a8408d9fc2155664f6b0c727391f5
https://doi.org/10.1016/j.jcrysgro.2018.10.031
https://doi.org/10.1016/j.jcrysgro.2018.10.031
Autor:
Jason W. Boucher, Shannon W. Boettcher, Benjamin F. Bachman, Christopher J. Funch, Shaul Aloni, Ann L. Greenaway
Publikováno v:
ACS Applied Energy Materials, vol 1, iss 2
Ga1-xInxP is a technologically important III-V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1-xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III-V semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5339f3adde4d6d6f52de199ebb2c5321
https://doi.org/10.1021/acsaem.7b00199
https://doi.org/10.1021/acsaem.7b00199
Autor:
Shannon W. Boettcher, Ann L. Greenaway, Jason W. Boucher, Christopher J. Funch, Sebastian Z. Oener
Publikováno v:
ACS Energy Letters. 2:2270-2282
III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f19cba8e416e93e52414a4ec9e66573c
https://doi.org/10.1021/acsenergylett.7b00633
https://doi.org/10.1021/acsenergylett.7b00633
Autor:
Shaul Aloni, Ann L. Greenaway, Matthew G. Kast, Jason W. Boucher, Lyndi E. Strange, Shannon W. Boettcher, Meredith C. Sharps
Publikováno v:
ACS Energy Letters. 1:402-408
Close-spaced vapor transport is a plausibly low-cost, high-rate method to grow III–V materials for photovoltaic and photoelectrochemical device applications. We report the first homoepitaxial growth of GaAs microstructures on (100)- and (111)B-orie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c3cf5757f7fe1e14eb63f480181fe7
https://doi.org/10.1021/acsenergylett.6b00217
https://doi.org/10.1021/acsenergylett.6b00217
Autor:
Shaul Aloni, Allison L. Davis, Jason W. Boucher, Shannon W. Boettcher, Andrew J. Ritenour, Ann L. Greenaway
Publikováno v:
Journal of Materials Chemistry A. 4:2909-2918
We report the heteroepitaxial growth of variable composition n-GaAs1−xPx directly on GaAs substrates via close-spaced vapor transport using mixed GaAs–GaP powder sources. GaAs1−xPx films showed an average 10% reduction in atomic concentration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1c3b79938819839f7353a86c5767f6
https://doi.org/10.1039/c5ta06900a
https://doi.org/10.1039/c5ta06900a
Autor:
Jason W. Boucher, Andrew J. Ritenour, Robert DeLancey, Shannon W. Boettcher, Shaul Aloni, Ann L. Greenaway
Publikováno v:
Energy & Environmental Science. 8:278-285
We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm−3) of the films we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b42294d8fc1dcc08a509a506f84e689
https://doi.org/10.1039/c4ee01943a
https://doi.org/10.1039/c4ee01943a
Autor:
Shannon W. Boettcher, Brian E. McCandless, J.D. Cohen, Jason W. Boucher, Charles W. Warren, Jennifer T. Heath, D.W. Miller, Mark C. Lonergan
Publikováno v:
Solar Energy Materials and Solar Cells. 129:57-63
Transient photocapacitance (TPC) and photocurrent (TPI) spectroscopy were used to characterize defects in CdTe/CdS solar cells. A broad defect band is observed at an optical energy of 1.28 eV above the valence band, and such a defect is not indicated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f565fafeea19215cad3270b0a015e1
https://doi.org/10.1016/j.solmat.2014.02.024
https://doi.org/10.1016/j.solmat.2014.02.024
Autor:
Benjamin F. Bachman, Shaul Aloni, Allison L. Davis, Jason W. Boucher, Shannon W. Boettcher, Ann L. Greenaway, Andrew J. Ritenour
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III–V photovoltaics, particularly if g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17fde687463818c7b2c0b537dcbb1aab
https://doi.org/10.1109/pvsc.2015.7356079
https://doi.org/10.1109/pvsc.2015.7356079
Autor:
Jason W. Boucher, Shannon W. Boettcher
Publikováno v:
Journal of Applied Physics. 121:093102
Close-spaced vapor transport (CSVT) provides a plausible path to lower the costs of GaAs deposition as it uses only solid precursors and provides precursor utilization in principle approaching 100%. However, the use of H2O as a transport agent causes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb519d0b57dee6a1baf6bcc5c6e73fb
https://doi.org/10.1063/1.4977757
https://doi.org/10.1063/1.4977757