Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Jason W. A. Robinson"'
Autor:
Theodor Lundberg, David J. Ibberson, Jing Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Publikováno v:
npj Quantum Information, Vol 10, Iss 1, Pp 1-12 (2024)
Abstract Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), h
Externí odkaz:
https://doaj.org/article/fad589327d104537a2a480d3b048da06
Autor:
Muhammad Shahbaz Anwar, Taketomo Nakamura, Ryosuke Ishiguro, Shafaq Arif, Jason W. A. Robinson, Shingo Yonezawa, Manfred Sigrist, Yoshiteru Maeno
Publikováno v:
Communications Physics, Vol 6, Iss 1, Pp 1-8 (2023)
Abstract Non-reciprocal electronic transport in a material occurs if both time reversal and inversion symmetries are broken. The superconducting diode effect (SDE) is an exotic manifestation of this type of behavior where the critical current for pos
Externí odkaz:
https://doaj.org/article/4547728b36f3472785ede577d03ad18e
Autor:
Kaveh Delfanazari, Jiahui Li, Pengcheng Ma, Reuben K. Puddy, Teng Yi, Yusheng Xiong, Ian Farrer, Sachio Komori, Jason W. A. Robinson, David A. Ritchie, Michael J. Kelly, Hannah J. Joyce, Charles G. Smith
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract Stable, reproducible, scalable, addressable, and controllable hybrid superconductor–semiconductor (S–Sm) junctions and switches are key circuit elements and building blocks of gate‐based quantum processors. The electrostatic field effe
Externí odkaz:
https://doaj.org/article/6ddf722459ea4c5dafe9a54e0f5926b5
Autor:
Alon Gutfreund, Hisakazu Matsuki, Vadim Plastovets, Avia Noah, Laura Gorzawski, Nofar Fridman, Guang Yang, Alexander Buzdin, Oded Millo, Jason W. A. Robinson, Yonathan Anahory
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
A nonreciprocal critical current is known as the superconducting diode effect (SDE). Here, the authors use SQUID-on-tip to study SDE in a EuS/Nb bilayer and find that the stray field from magnetized EuS creates screening currents in the Nb, which lea
Externí odkaz:
https://doaj.org/article/478def6b59114d1ba7a4942df98b5da2
Autor:
Muhammad Shahbaz Anwar, Taketomo Nakamura, Ryosuke Ishiguro, Shafaq Arif, Jason W. A. Robinson, Shingo Yonezawa, Manfred Sigrist, Yoshiteru Maeno
Publikováno v:
Communications Physics, Vol 6, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/d4ca15fcd8aa480a810fa7eb73eee589
Publikováno v:
Communications Materials, Vol 3, Iss 1, Pp 1-18 (2022)
Hall effect measurements are often used to identify chiral spin textures in materials through the topological Hall effect, but similar Hall signals can arise due to sample inhomogeneity or experimental issues. Here, SrRuO3 is used as a model system t
Externí odkaz:
https://doaj.org/article/9729bb62488f454f96be347dd1dc3491
Autor:
Carla Maria Palomares Garcia, Angelo Di Bernardo, Graham Kimbell, Mary E. Vickers, Fabien C-P. Massabuau, Sachio Komori, Giorgio Divitini, Yuuki Yasui, Han Gyeol Lee, Jinkwon Kim, Bongju Kim, Mark G. Blamire, Antonio Vecchione, Rosalba Fittipaldi, Yoshiteru Maeno, Tae Won Noh, Jason W. A. Robinson
Publikováno v:
Communications Materials, Vol 1, Iss 1, Pp 1-8 (2020)
The pairing symmetry of superconducting Sr2RuO4 is debated, and analysis is complicated by difficulties in preparing high-quality thin films. Here, thin films of Sr2RuO4 are reproducibly grown by pulsed laser deposition with a Sr3Ru2O7 single crystal
Externí odkaz:
https://doaj.org/article/4598ab5e7df1459181e11a21b559b06b
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 050703-050703-10 (2021)
Spintronics aims to utilize the spin degree of freedom for energy-efficient, non-volatile memory and logic devices. In this research update, we review state-of-the-art developments and new directions in charge- and spin-based memory/logic with a focu
Externí odkaz:
https://doaj.org/article/a19eee7a8ce046ddb4df55457c04f44a
Autor:
Sandra Ruiz-Gómez, Aída Serrano, Rubén Guerrero, Manuel Muñoz, Irene Lucas, Michael Foerster, Lucia Aballe, José F. Marco, Mario Amado, Lauren McKenzie-Sell, Angelo di Bernardo, Jason W. A. Robinson, Miguel Ángel González Barrio, Arantzazu Mascaraque, Lucas Pérez
Publikováno v:
APL Materials, Vol 6, Iss 10, Pp 101107-101107-8 (2018)
The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger values ar
Externí odkaz:
https://doaj.org/article/27a8b0329d9c46ea97391aa9d2db3615
Autor:
Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Publikováno v:
Physical Review X, Vol 10, Iss 4, p 041010 (2020)
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-
Externí odkaz:
https://doaj.org/article/eb9f71a0a9c8445eb900db258d6b98c5