Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jason Plumhoff"'
Publikováno v:
ECS Transactions. 50:11-20
In silicon-substrate processing, it is frequently a requirement to create high-aspect-ratio anisotropic profiles. To do this Time Division Multiplexed processes are almost exclusively used. By alternating between a passivation step and an etching ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e554118fcd821e2a96d651569f08bb2b
https://doi.org/10.1149/05046.0011ecst
https://doi.org/10.1149/05046.0011ecst
Autor:
Linnell Martinez, Russ Westerman, Chris R. Johnson, Dwarakanath Geerpuram, Dave Johnson, Jason Plumhoff
Publikováno v:
ECS Transactions. 34:421-426
For plasma etching processes, Optical Emission Interferometry (OEI) combines the advantages of Optical Emission Spectroscopy (OES) and laser interferometry. Radiation emitted by the plasma is reflected from the substrate surface and monitored using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e34f9460c108d246f95a5dadfc0046
https://doi.org/10.1149/1.3567615
https://doi.org/10.1149/1.3567615
Autor:
Jason Plumhoff, Alexander X. Gray
Publikováno v:
SPIE Proceedings.
Phase, along with defect levels and CD, must be closely monitored on 45nm technology node masks. The final phase shift of a mask is highly dependent on the ability of the etch tool to stop at precisely the correct depth. Developing etch processes and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d733736d170df3d45b3f8e3c21099c22
https://doi.org/10.1117/12.793016
https://doi.org/10.1117/12.793016
Publikováno v:
SPIE Proceedings.
The ITRS roadmap indicates that significant improvements in photomask processing will be necessary to achieve the design goals of 45nm technology node masks. In the past, etch systems were designed to produce an etch signature that was as "flat" as p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66cf9cb5b7ca917bdf1e2b75343017b
https://doi.org/10.1117/12.686390
https://doi.org/10.1117/12.686390
Publikováno v:
SPIE Proceedings.
In any plasma etch process, there are slight variations in the output of generators, mass flows, and pressure control systems that may sometimes contribute to run-to-run differences in the final product. Even excluding material differences, endpoint
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8cc2c3882f6c888c69af474074c873
https://doi.org/10.1117/12.681757
https://doi.org/10.1117/12.681757
Publikováno v:
SPIE Proceedings.
Alternating Aperture Phase Shift masks (alt-APSM) are being increasingly used to meet present day lithography requirements by providing increased resolution. The quartz dry etch is a critical step in the manufacture of these photomasks. Etch depth li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7961c581dd4bb35e464647994c8fb8a5
https://doi.org/10.1117/12.571468
https://doi.org/10.1117/12.571468
Autor:
Corinna Koepernik, Bernd Leibold, Rainer Plontke, Jason Plumhoff, Peter Voehringer, Joerg Butschke, Emmanuel Rausa, Mathias Irmscher, Dirk Beyer
Publikováno v:
SPIE Proceedings.
The combination of conductive topcoat ESPACER Z300 and positive tone CAR FEP171 was investigated in detail for the second level patterning of Alternating Aperture Phase Shift Masks (AAPSM) using e-beam lithography. Chrome load variations between 2 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205dd8549a4b7a1c02d7d0441108fd74
https://doi.org/10.1117/12.557719
https://doi.org/10.1117/12.557719
Publikováno v:
SPIE Proceedings.
To overcome the resolution limits of the current generation of steppers, mask makers are forced to include an ever-growing number of OPC features on 65 nm node masks. Although lithography techniques have improved significantlyin the last five years,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c94273e74b5e604ac7de953efd66f53
https://doi.org/10.1117/12.557706
https://doi.org/10.1117/12.557706
Autor:
Dirk Beyer, Corinna Koepernik, Mitsuru Sato, Emmanuel Rausa, Jason Plumhoff, Joerg Butschke, Peter Hudek, Mathias Irmscher, Peter Voehringer
Publikováno v:
SPIE Proceedings.
Optimized process parameters using the TOK OEBR-CAN024 resist for high chrome load patterning have been determined. A tight linearity tolerance for opaque and clear features, independent on the local pattern density, was the goal of our process integ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eae383d247e31f3084fc046d7bd900d
https://doi.org/10.1117/12.557686
https://doi.org/10.1117/12.557686
Publikováno v:
SPIE Proceedings.
The ITRS roadmap indicates that significant improvements in photomask dry etching will be necessary to achieve the design goals of 90nm and 65nm technology node masks. Although some existing dry etch systems are capable of R&D work on these masks, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e7df372124599da6144274d884400e7
https://doi.org/10.1117/12.518138
https://doi.org/10.1117/12.518138