Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jason Jopling"'
Autor:
Jason Jopling
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c478f951fad605a61179f4401bb8c8
https://doi.org/10.1109/irps48203.2023.10117694
https://doi.org/10.1109/irps48203.2023.10117694
Autor:
Paul M. Solomon, Paul Ronsheim, W. Haensch, David J. Frank, Jason Jopling, Chris D’Emic, Omer H. Dokumaci
Publikováno v:
Journal of Applied Physics. 95:5800-5812
Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal–oxide–silicon (CMOS) field effect transistors. Measurements were done over a wide range of temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd5099c6e1352a9246032c14f78b9e17
https://doi.org/10.1063/1.1699487
https://doi.org/10.1063/1.1699487
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
This paper addresses several key aspects of integrated reliability for the Intel 45nm logic technology with high-K metal gate (HK+MG) transistors and Pb-free packaging. Significant changes in process architecture and materials were introduced and car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fbec1598220e5875b262acc57780d73
https://doi.org/10.1109/irps.2009.5173277
https://doi.org/10.1109/irps.2009.5173277
Publikováno v:
ECS Meeting Abstracts. :750-750
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfe02e03be158b31cb9b4cb4d7a58f88
https://doi.org/10.1149/ma2005-02/19/750
https://doi.org/10.1149/ma2005-02/19/750