Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jason Hoo"'
Autor:
Ping Ouyang, Kunzi Liu, Jiaxin Zhang, Qiushuang Chen, Liqiong Deng, Long Yan, Jason Hoo, Shiping Guo, Li Chen, Wei Guo, Jichun Ye
Publikováno v:
Crystals, Vol 13, Iss 7, p 1076 (2023)
Semipolar AlGaN multiple quantum wells (MQWs) have unique advantages in deep ultraviolet light emitters due to the weak Quantum-Confined Stark Effect. However, their applications are hampered by the poor crystalline quality of semipolar AlGaN thin fi
Externí odkaz:
https://doaj.org/article/873343974c7c491080e891ae8469af81
Autor:
Moheb Sheikhi, Wei Guo, Yijun Dai, Mei Cui, Jason Hoo, Shiping Guo, Liang Xu, Jianzhe Liu, Jichun Ye
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 6, Pp 1-8 (2019)
In this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatme
Externí odkaz:
https://doaj.org/article/a1952ae41f3046a085d3da72841431c0
Autor:
Jie’an Jiang, Houqiang Xu, Li Chen, Long Yan, Jason Hoo, Shiping Guo, Yuheng Zeng, Wei Guo, Jichun Ye
Publikováno v:
Photonics, Vol 8, Iss 5, p 157 (2021)
Pyramid-shaped InGaN/GaN micro-light-emitting diodes (μ-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of a single μ-LED pyramid at 412 nm was observed under an injection current fro
Externí odkaz:
https://doaj.org/article/103a8ded13744adb8fb91df5aba754ad
Autor:
Zhongming Zheng, Yukun Wang, Jason Hoo, Shiping Guo, Yang Mei, Hao Long, Leiying Ying, Zhiwei Zheng, Baoping Zhang
Publikováno v:
Science China Materials. 66:1978-1988
Autor:
Ye, Ping Ouyang, Kunzi Liu, Jiaxin Zhang, Qiushuang Chen, Liqiong Deng, Long Yan, Jason Hoo, Shiping Guo, Li Chen, Wei Guo, Jichun
Publikováno v:
Crystals; Volume 13; Issue 7; Pages: 1076
Semipolar AlGaN multiple quantum wells (MQWs) have unique advantages in deep ultraviolet light emitters due to the weak Quantum-Confined Stark Effect. However, their applications are hampered by the poor crystalline quality of semipolar AlGaN thin fi
Autor:
Runze Lin, Zuxin Jin, Pengjiang Qiu, Yue Liao, Jason Hoo, Shiping Guo, Xugao Cui, Pengfei Tian
Publikováno v:
Optics letters. 47(13)
In this Letter, a record modulation bandwidth of 1.31 GHz was achieved by a 10 µm c-plane green micro light emitting diode (micro-LED) at a current density of 41.4 kA/cm2. Furthermore, by designing a series-biased 20 µm micro-LED with higher light
Autor:
Jason Hoo, Zhi-Wei Zheng, Shiping Guo, Baoping Zhang, Zhongming Zheng, Yang Mei, Qingxuan Li, Lei-Ying Ying, Hao Long
Publikováno v:
IEEE Electron Device Letters. 42:375-378
An optically pumped AlGaN-based vertical-cavity surface-emitting laser (VCSEL) in the deep ultraviolet (DUV) range (< 280 nm) is demonstrated. The lasing wavelength is 275.91 nm with a threshold power density of 1.21 MW/cm2 and a linewidth of 0.78 nm
Autor:
Mei Cui, Houqiang Xu, Jiqiang Ning, Xiaotian Ge, Jie’an Jiang, Biplab Sarkar, Haiding Sun, Jichun Ye, Shiping Guo, Jason Hoo, Wei Guo, Kuang-Hui Li, Long Yan, Yijun Dai
Publikováno v:
ACS Applied Nano Materials. 3:5335-5342
Optical properties of AlGaN UVC multiple-quantum-wells (MQWs) with nanoscale inverted polarity domains are strongly related to the polar surfaces and nanoscale structures. In this work, the impact ...
Autor:
Liang Xu, Mei Cui, Jichun Ye, Jianzhe Liu, Jason Hoo, Wei Guo, Yijun Dai, Shiping Guo, Moheb Sheikhi
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 6, Pp 1-8 (2019)
In this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatme
Autor:
Li Chen, Jie Sun, Wei Guo, Jason Hoo, Wei Lin, Hangyang Chen, Houqiang Xu, Long Yan, Shiping Guo, Junyong Kang, Jichun Ye
Publikováno v:
Photonics Research. 10:2778
Semipolar III-nitrides have attracted increasing attention in applications of optoelectronic devices due to the much reduced polarization field. A high-quality semipolar AlN template is the building block of semipolar AlGaN-based deep-ultraviolet lig