Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jason F. Ross"'
Autor:
Jason F. Ross, Ashok Raman, Nadim F. Haddad, John C. Rodgers, Lloyd W. Massengill, Ronald D. Schrimpf, Andrew T. Kelly, Ernesto Chan, Dennis R. Ball, Michael L. Alles, Marek Turowski
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3068-3073
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d3e6f0e7b278ac81ee02441e034603
https://doi.org/10.1109/tns.2014.2368931
https://doi.org/10.1109/tns.2014.2368931
Autor:
Nadim F. Haddad, Robert A. Reed, Bin Li, Robert A. Weller, Andrew T. Kelly, Marcus H. Mendenhall, John C. Rodgers, Jason F. Ross, Reed K. Lawrence, Kevin M. Warren
Publikováno v:
IEEE Transactions on Nuclear Science. 58:975-980
SEU enhancements were introduced into a radiation hardened 90 nm CMOS technology to achieve upset immunity. An incremental enhancement approach that enables various SEU/performance trade-off was demonstrated on the same basic SRAM cell to achieve var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b2b0f5373cd50943bc37b53b612770a
https://doi.org/10.1109/tns.2011.2128882
https://doi.org/10.1109/tns.2011.2128882
Publikováno v:
IEEE Transactions on Nuclear Science. 57:1849-1855
Analysis techniques have been done to provide the physical evidence that the electrical signature observed from a single event gate rupture (SEGR) event on a deep trench oxide capacitor from 90nm bulk complementary metal oxide semiconductor (CMOS) te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c643c8c5edb904d5f313d1b97707a091
https://doi.org/10.1109/tns.2010.2042300
https://doi.org/10.1109/tns.2010.2042300
Autor:
D. Patel, S. Doyle, Ernesto Chan, Andrew T. Kelly, Nadim F. Haddad, D. Lawson, Reed K. Lawrence, Jason F. Ross
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2077-2082
Preliminary radiation effects analysis on a commercial 90nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82cb80befe6c4f04f444788409f0d514
https://doi.org/10.1109/tns.2009.2023521
https://doi.org/10.1109/tns.2009.2023521
Autor:
Joe Stevenson, Lassa Marla J, Mary Hanley, Richard W. Berger, Brian Saari, Jason F. Ross, Gilliam Jane O, Ernesto Chan, Dan Pirkl, Patrick Fleming, Andrew T. Kelly, Steve A. Chadwick, Robert Lapihuska, Joseph R. Marshall, Richard Ferguson, Bin Li, Dave Moser, Hugh Miller, M. Graziano, Rickard Dale A, Daniel L. Stanley
Publikováno v:
2015 IEEE Aerospace Conference.
Based on the QorIQ® system-on-chip processor architecture from Freescale Semiconductor with additional unique features for space applications, the RAD55xxTM system-on-chip platform integrated circuit can be personalized into multiple processor solut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e800bfcf63336336d8d2a450d78a0e91
https://doi.org/10.1109/aero.2015.7119114
https://doi.org/10.1109/aero.2015.7119114
Autor:
Jennifer Koehler, Arthur Russell Blumen, Steven G. Santee, Jeannine Robertazzi, Kenneth R. Knowles, Jeffrey E. Robertson, Brian Saari, Rickard Dale A, Ernesto Chan, Gilliam Jane O, David Hutcheson, Randall Richards, Mary Hanley, Richard W. Berger, Matta John T, Daniel L. Stanley, James Livoti, Jacob Federico, Daniel Trippe, Patrick Fleming, Ashraf Nisar, Jason F. Ross, Bryon Lauper, Shaffer Mark R, Dan Pirkl
Publikováno v:
2015 IEEE Aerospace Conference.
This paper describes the key components for implementing a modern network for intra-satellite communications at the backplane and spacecraft local area network (LAN) levels. The objective network is capable of supporting orders of magnitude more on-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4896edf7dd31328152c22ba390bcf03e
https://doi.org/10.1109/aero.2015.7119241
https://doi.org/10.1109/aero.2015.7119241
Publikováno v:
2012 IEEE Aerospace Conference.
Technology status and qualification test results are discussed on two new deep submicron radiation hardened devices including a 64Mb SRAM family and stacked MCM versions of the C-RAM non-volatile memory. Electrical characterization and radiation test
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56be493d1cc522450f6f7885a31953be
https://doi.org/10.1109/aero.2012.6187231
https://doi.org/10.1109/aero.2012.6187231
Publikováno v:
2010 IEEE Radiation Effects Data Workshop.
Single event transient (SET) pulsewidth measurements were made on 9SF 90 nm shift registers built with temporal delay latches on epitaxial substrates. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468b5d10505007fa21631066af3cd824
https://doi.org/10.1109/redw.2010.5619492
https://doi.org/10.1109/redw.2010.5619492
Publikováno v:
2009 IEEE Radiation Effects Data Workshop.
Enhanced single event upset (SEU) sensitivity to low energy protons, as much as 5-6 orders of ten, has been observed in 90 nm epitaxial-bulk complementary metal oxide semiconductor (CMOS) static random access memories (SRAM). Enhancements to process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::234a260f09db3c28f1f90743c020607c
https://doi.org/10.1109/redw.2009.5336302
https://doi.org/10.1109/redw.2009.5336302
Publikováno v:
2007 International Semiconductor Device Research Symposium.
Electrical and radiation test results will be presented on a deep submicron radiation hardened 16 Mb SRAM IC. The significant technology development and device design challenges will be chronicled from initial SEE modeling, to testchip hardware, to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6035cc5c3f9d465088a6d139d08cedd6
https://doi.org/10.1109/isdrs.2007.4422259
https://doi.org/10.1109/isdrs.2007.4422259