Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jason Eugene Stephens"'
Autor:
Youngtag Woo, Jagar Singh, Geert Van der Plas, B. Senapati, Shan Gao, Jason Eugene Stephens, Adam Beece, Lu Yuan, Michelle Sureddin, Mahbub Rashed, Ali Wehbi, Srikant Samavedam, Van Ton-That, Irene Lin, Jongwook Kye, Donald Yu, Guillaume Bouche, Kanagala Vijay, Rod Augur, Peter Hang, Ramakanth Alapati, Dragomir Milojevic
Publikováno v:
International Symposium on Microelectronics. 2015:000035-000040
The traditional drivers for the adoption of 3D integration technology are footprint, power, performance, and/or bandwidth gains at the expense of increased cost due to additional wafer processing, dies stacking and 3D test. However, for larger dies i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54567f4229b1e92787cabdee830b1b8
https://doi.org/10.4071/isom-2015-tp21
https://doi.org/10.4071/isom-2015-tp21
Autor:
James Hsueh-Chung Chen, Terry A. Spooner, Martin O'Toole, Jason Eugene Stephens, Shreesh Narasimha, Ben Kim, Licausi Nicholas, Craig Child
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
In this paper, a strategy of performing segment removal in an SAQP (self-aligned quadruple patterning) and its implication on interconnect parasitic capacitance are reported. In order to reduce the cost and process complexity, through process emulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb214faa90ea884f4e0d999979442ac2
https://doi.org/10.1109/iitc-amc.2017.7968943
https://doi.org/10.1109/iitc-amc.2017.7968943
Autor:
Martin O'Toole, James Hsueh-Chung Chen, Shreesh Narasimha, Jason Eugene Stephens, Shao Beng Law, Genevieve Beique, Ben Kim, Craig Child, E. Todd Ryan, Steven Leibiger, Louis J. Lanzerotti, Terry A. Spooner
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
In this paper, the impact of gap-fill planarity on Multi-Self-Aligned Block, SADP (self-aligned double patterning) process for advanced optical technology nodes (7 nm/5 nm) interconnects was studied through process emulations. This study specifically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4672fecbe6df4af021d44ffb253152cc
https://doi.org/10.1109/iitc-amc.2017.7968964
https://doi.org/10.1109/iitc-amc.2017.7968964
Autor:
Aleksandra Clancy, Ayman Hamouda, Ashwini Chandrasekhar, Shyam Pal, Jeff Shu, Christopher Ordonio, Jason Eugene Stephens, Chun Hui Low, Ming He, Prakash Periasamy, Mary Claire Silvestre, Anbu Selvam Km Mahalingam, Peter Welti, Craig Child, Granger Lobb, Ketan Shah
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
10nm M1 local interconnect is using three-color litho-etch-litho-etch-litho-etch (LELELE) integration to enable technology scaling. This paper discusses the challenges to balance the three-color density in critical standard cell scaling, illustrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a2ece826e66bfdf116c6484b2c2ed5
https://doi.org/10.1109/iitc-amc.2016.7507642
https://doi.org/10.1109/iitc-amc.2016.7507642
Autor:
Jason Eugene Stephens, Timothy J. R. Weakley, R. J. Yager, S. C. Abrahams, M.R. Bauer, E. R. Ylvisaker, Panos Photinos, M. Mengis, R.D. Wiegel, Peter K. Wu
Publikováno v:
Acta crystallographica. Section B, Structural science. 60(Pt 6)
Crystals of phase II K2Cr2O7, potassium dichromate, space group P\overline 1, grown from aqueous solution undergo a first-order transition to phase I, space group reportedly P21/n, at a phase-transition temperature, T PT, of 544 (2) K on first heatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3066c702db36a712f54d0751787a881
https://pubmed.ncbi.nlm.nih.gov/15534381
https://pubmed.ncbi.nlm.nih.gov/15534381