Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jason Doub"'
Publikováno v:
ECS Transactions. 69:3-14
Die singulation by mechanical sawing has been the primary technology used in semiconductor device fabrication for decades. However as device structures continue to evolve to meet increasing performance requirements, the fundamental limitations of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f9aca857a59d85e03e316ae2039fc4d
https://doi.org/10.1149/06906.0003ecst
https://doi.org/10.1149/06906.0003ecst
Autor:
Gordy Grivna, Guy F. Burgess, David Lishan, Linnell Martinez, Thierry Lazerand, David Pays-Volard, Ted Tessier, Kenneth Mackenzie, Jason Doub
Publikováno v:
International Symposium on Microelectronics. 2014:000148-000154
To meet the changing demands of consumer product form factors, there has been a steady shift to thinner and smaller semiconductor die, both of which increase the challenges for die singulation. The traditional approach of saw dicing is facing new lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4febf628db9bf12d6327efa66b0794a9
https://doi.org/10.4071/isom-ta56
https://doi.org/10.4071/isom-ta56
Autor:
Chris Cioffi, Deborah M. Florence, Chuck Russell, Sheila Burtosky, Jason Doub, Keith Mortensen
Publikováno v:
ECS Transactions. 11:291-298
Reliable via formation requires complete polymer removal in vias prior to barrier deposition to obtain low electrical resistance contacts between metal conductor layers. A failure mechanism of high resistance and open vias was observed due to aluminu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631345d4c38f062052cb321da1d48ad8
https://doi.org/10.1149/1.2779391
https://doi.org/10.1149/1.2779391
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Gate Oxide failure analysis during technology qualification led to discovery of the polysilicon hole defects in large (>200K μm2) PMOS capacitors. In-line KLA inspections confirmed that polysilicon holes were formed during the salicide block process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3088c1328081490caa1f40852c94b136
https://doi.org/10.1109/asmc.2011.5898195
https://doi.org/10.1109/asmc.2011.5898195
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
The unique characteristics of defective MIM capacitors under nano-ampere current injection and passive voltage contrast have verified the field enhancement and charge accumulation along nanotipped defects. The improved process which reduces the risk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4070bda57885b152312ffc2df0e9c88f
https://doi.org/10.1109/irps.2009.5173355
https://doi.org/10.1109/irps.2009.5173355
Autor:
Deborah M. Florence, Sheila Burtosky, Chris Cioffi, Jason Doub, Raymond Lappan, Keith Mortensen, Chuck Russell
Publikováno v:
ECS Meeting Abstracts. :1048-1048
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca8bcc5fe8549f8b1b5a1e88905a642
https://doi.org/10.1149/ma2007-02/18/1048
https://doi.org/10.1149/ma2007-02/18/1048