Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jason B. Rothenberger"'
Autor:
Kyuhak Oh, Robert J. Schott, Eric Lukosi, Denis A. Wisniewski, Mark A. Prelas, Jason B. Rothenberger, Charles L. Weaver
Publikováno v:
Applied Radiation and Isotopes. 132:110-115
Radiation damage is a significant concern with both alphavoltaic and betavoltaic cells because their performance degrades, especially with high-energy - (>200 keV) beta and alpha particles. Indirect excitation methods, such as the Photon Intermediate
Autor:
Charles L, Weaver, Robert J, Schott, Mark A, Prelas, Denis A, Wisniewski, Jason B, Rothenberger, Eric D, Lukosi, Kyuhak, Oh
Publikováno v:
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 132
Radiation damage is a significant concern with both alphavoltaic and betavoltaic cells because their performance degrades, especially with high-energy - (200keV) beta and alpha particles. Indirect excitation methods, such as the Photon Intermediate D
Autor:
Robert J. Schott, Jason B. Rothenberger, Mark A. Prelas, Robert V. Tompson, Kyuhak Oh, Charles L. Weaver, Denis A. Wisniewski
Publikováno v:
Nuclear Technology. 181:349-353
The use of a photon intermediate direct energy conversion (PIDEC) process to develop a proof of concept of a long-lived and efficient nuclear battery powered by a radioactive beta source is discuss...
Autor:
Daniel E. Montenegro, Mark A. Prelas, Robert J. Schott, Denis A. Wisniewski, Kyuhak Oh, Charles L. Weaver, Jason B. Rothenberger, Eric Lukosi
Publikováno v:
Nuclear Technology. 179:243-249
This paper presents a study on the optimization of the amount of energy deposited by alpha particles in the depletion region of a silicon carbide (SiC) alphavoltaic cell using Monte Carlo models. T...
Autor:
Mark A. Prelas, Eric Lukosi, Daniel E. Montenegro, Denis A. Wisniewski, Charles L. Weaver, Kyuhak Oh, J Jeong, Robert J. Schott, Jason B. Rothenberger
Publikováno v:
Nuclear Technology. 179:234-242
Monte Carlo simulations have been used for calculating the energy deposition of beta particles in the depletion region of a silicon carbide (SiC) betavoltaic cell along with the corresponding theor...
Autor:
Jason B. Rothenberger, Daniel E. Montenegro, Tushar K. Ghosh, Robert V. Tompson, Mark A. Prelas, Sudarshan K. Loyalka
Publikováno v:
Journal of Materials Research. 27:1198-1204
A single crystal aluminum nitride (AlN) wafer surface was investigated via the use of a novel software-based, Charge-based Deep Level Transient Spectroscopy (Q-DLTS) apparatus, both before and after surface bond termination with hydrogen plasma. The
Autor:
Robert V. Tompson, Daniel E. Montenegro, Sudarshan K. Loyalka, Tushar K. Ghosh, Jason B. Rothenberger, Mark A. Prelas
Publikováno v:
Diamond and Related Materials. 23:72-75
The wide band-gap semiconductor material, single crystal Aluminum Nitride (AlN), was used in the development of a chemical sensor based on the Quantum Fingerprint™ method. The carefully prepared AlN surface was interrogated following exposure to te