Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jason Allen Janesky"'
Publikováno v:
IEEE Transactions on Electron Devices. 67:1407-1419
Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent memory technology because of its long data retention and robust endurance. Initial MRAM products utilized toggle mode writing of a balanced synthetic antiferromagnet (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fbc1576f1138f9c3a784b2239cbf126
https://doi.org/10.1109/ted.2020.2965403
https://doi.org/10.1109/ted.2020.2965403
Autor:
Dietmar Gogl, Greg Viot, Jieming Qi, Xiaohu Zhang, Frederick Neumeyer, William Meadows, Barkatullah Javed S, Tom Andre, Syed M. Alam, Mark F. Deherrera, Bryan Kang, Halbert S. Lin, Jason Allen Janesky, Yaojun Zhang, Forhad Hossain
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
Magnetoresistive Random Access Memory (MRAM) technology was introduced into the market last decade in the form of Toggle MRAM, available in densities up to 16Mb. In the last few years, Spin-Torque MRAM, the next generation of Magnetic Tunnel Junction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b468f7662274e52b0051c4dbb10423
https://doi.org/10.1109/imw.2017.7939104
https://doi.org/10.1109/imw.2017.7939104
Autor:
Mark A. Durlam, Jijun Sun, Mark F. Deherrera, Renu W. Dave, Gregory W. Grynkewich, Srinivas V. Pietambaram, Johan Åkerman, J.M. Slaughter, Kenneth H. Smith, Bradley N. Engel, Saied N. Tehrani, N. D. Rizzo, Brian R. Butcher, Jason Allen Janesky
Publikováno v:
IEEE Transactions on Magnetics. 41:132-136
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789b241ceda36f221bc524eaeeae684f
https://doi.org/10.1109/tmag.2004.840847
https://doi.org/10.1109/tmag.2004.840847
Autor:
Brian R. Butcher, Mark F. Deherrera, Johan Åkerman, Jon M. Slaughter, M. Durlam, Gregory W. Grynkewich, Renu W. Dave, J. J. Sun, Srinivas V. Pietambaram, Bradley N. Engel, N. D. Rizzo, Saied N. Tehrani, Jason Allen Janesky, P. Brown, Kenneth H. Smith
Publikováno v:
Scopus-Elsevier
Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37838f923200481aa7ceb84c1fce4c92
https://doi.org/10.1557/mrs2004.234
https://doi.org/10.1557/mrs2004.234
Autor:
Jason Allen Janesky, M. Durlam, Saied N. Tehrani, M. Griswold, P. Brown, Earl D. Fuchs, Johan Åkerman, Mark F. Deherrera, D. Gajewski, Joseph J. Nahas
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:428-435
The successful commercialization of MRAM will rely on providing customers with a robust and reliable memory product. The intrinsic reliability of magnetoresistive tunnel junction (MTJ) memory bits and the metal interconnect system of MRAM are two are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed11148b5eacd52b2addb271d292224f
https://doi.org/10.1109/tdmr.2004.837608
https://doi.org/10.1109/tdmr.2004.837608
Autor:
Renu W. Dave, J.M. Slaughter, Jijun Sun, Srinivas V. Pietambaram, Jason Allen Janesky, G. Steiner
Publikováno v:
IEEE Transactions on Magnetics. 40:2619-2621
Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal endurance are key issues for these technologies. We find that the coupling strength increases wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de6d1055dc5b8c284a55176a172c1a9e
https://doi.org/10.1109/tmag.2004.834209
https://doi.org/10.1109/tmag.2004.834209
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
We present a complete study of the influence of thermal activation on the DW mode, the toggle mode, and on the separate first and second pulses of the toggle sequence. To obtain these results, we developed a novel technique that employs a train of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6101c8f9a3545311f273bc47377f690b
https://doi.org/10.1109/intmag.2006.376125
https://doi.org/10.1109/intmag.2006.376125
Autor:
M. Martin, H. Mekonnen, Johan Åkerman, Joseph J. Nahas, M. Griswold, Srinivas V. Pietambaram, Saied N. Tehrani, Jason Allen Janesky, D. Gajewski, P. Brown, J.M. Slaughter
Publikováno v:
Scopus-Elsevier
Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b2fc7191071a7403a89ed9d47bf85b1
https://doi.org/10.1109/relphy.2005.1493078
https://doi.org/10.1109/relphy.2005.1493078
Autor:
K. Smith, C. Frey, B. Feil, T. Ditewig, J. J. Sun, J. Chan, R. Fournel, R. Cuppens, Mark A. Durlam, D. Galpin, L. Wise, Saied N. Tehrani, M. Lien, Mark F. Deherrera, J. Tamim, Thomas W. Andre, J. Calder, Gloria Kerszykowski, Joseph J. Nahas, K. Nagel, R. Williams, B. Martino, Bradley J. Garni, S. Zoll, Jason Allen Janesky, Chitra K. Subramanian, J. Martin, Renu W. Dave, F. List, B.N. Engel, P. Brown, G. Grynkewich
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
A 90nm magnetoresistive random access memory (MRAM) based on the toggle switching mode has been successfully demonstrated for the first time in a 90nm CMOS process. The MRAM memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b774146b05cdf49fe162d07dbfe6101b
https://doi.org/10.1109/.2005.1469261
https://doi.org/10.1109/.2005.1469261
Autor:
B.N. Engel, J. J. Sun, Frederick B. Mancoff, Jason Allen Janesky, Saied N. Tehrani, Srinivas V. Pietambaram, Renu W. Dave, Nicholas D. Rizzo, Mark A. Durlam, J.M. Slaughter
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aac8ba36bff02caf327dbbea5be8676
https://doi.org/10.7567/ssdm.2005.h-9-1
https://doi.org/10.7567/ssdm.2005.h-9-1