Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jason A. DeSISTO"'
Autor:
Kevin O'Shea, Yoshihiro Yamamoto, Jin Wuk Sung, Libor Vyklicky, Pushkara Rao Varanasi, George G. Barclay, Irene Popova, James F. Cameron, Jason A. DeSISTO, Manabu Hidano, Johan Amara, David Valeri, Vaishali R. Vohra, Greg Prokopowicz, Adam Ware, Tomoki Kurihara, Kathleen M. O'Connell, Wu-Song Huang
Publikováno v:
Journal of Photopolymer Science and Technology. 22:17-24
A new family of materials has been developed to serve as a wet-developable bottom antireflective coating (D-BARC) for patterning levels that have a strong need to avoid dry-etch processes for BARC-open steps. Such include some implant levels, where d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c1c025ab30f31631633756506e17c2
https://doi.org/10.2494/photopolymer.22.17
https://doi.org/10.2494/photopolymer.22.17
Autor:
Cecily Andes, Jason A. DeSISTO, Sean D. Burns, Dario L. Goldfarb, Karen Petrillo, Martin Glodde, Young Cheol Bae, Martin Burkhardt, Yongan Xu, Jason E. Meiring, Matthew E. Colburn, Guillaume Landie, Michael Reilly, Anthony Francis Scaduto, Kenji Yoshimoto, Vaishali Vohra, L. Zhuang
Publikováno v:
SPIE Proceedings.
In this work, we investigate the Negative Tone Develop (NTD) process from a fundamental materials/process interaction perspective. Several key differences exist between a negative tone develop process and a traditional positive tone develop system. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c32b3d60f4bd5cd5f51be1665ab59a
https://doi.org/10.1117/12.882843
https://doi.org/10.1117/12.882843
Autor:
Marie Hellion, Teruaki Ogawa, Tracy K. Lindsay, Cheng Bai Xu, Jason A. DeSISTO, Tatum Kobayashi, Young Cheol Bae, Robert J. Kavanagh, Tsutomu Tanaka, George W. Orsula
Publikováno v:
SPIE Proceedings.
It was found that the structure of a matrix polymer has strong influence on the PEB sensitivity of 193nm photoresists. As reported, photoresists containing CO polymers exhibited superior property in terms of PEB sensitivity to photoresists formulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9c4fac32a06f496c9751a5473632e5
https://doi.org/10.1117/12.537451
https://doi.org/10.1117/12.537451
Publikováno v:
SPIE Proceedings.
The effect of assist feature optical proximity correction (OPC) has been well examined in 248nm lithography. The design of scattering bars is governed by rules that determine their ideal size and placement and for 248nm lithography have been successf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::741d894a2fb3dc4760df2c5e7714069e
https://doi.org/10.1117/12.474636
https://doi.org/10.1117/12.474636