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of 4
pro vyhledávání: '"Jasmin Ehrler"'
Autor:
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrucher, Holger Kalisch, Andrei Vescan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 248-255 (2023)
We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29Ga textsubscript 0.71N single heterostructures on sapphire substrates, grown by metalorganic vapor pha
Externí odkaz:
https://doaj.org/article/3bff6705f25a40da8b8626f5cf9cd637
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1056-1064 (2019)
Magnetic force microscopy (MFM) has become a widely used tool for the characterization of magnetic properties. However, the magnetic signal can be overlapped by additional forces acting on the tip such as electrostatic forces. In this work the possib
Externí odkaz:
https://doaj.org/article/2787fa5527104e6bb62fda32edc5ad16
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1056-1064 (2019)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
Magnetic force microscopy (MFM) has become a widely used tool for the characterization of magnetic properties. However, the magnetic signal can be overlapped by additional forces acting on the tip such as electrostatic forces. In this work the possib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07f2d10564192dc3051278ab841b9398
https://doaj.org/article/2787fa5527104e6bb62fda32edc5ad16
https://doaj.org/article/2787fa5527104e6bb62fda32edc5ad16
Autor:
Carsten Beckmann, Jens Wieben, Thorsten Zweipfennig, Arno Kirchbrücher, Jasmin Ehrler, Robert Stamm, Zineng Yang, Holger Kalisch, Andrei Vescan
Publikováno v:
Journal of Physics D: Applied Physics. 55:435102
GaN/Al x Ga1−x N heterostructures were grown by metal-organic vapor phase epitaxy to study in detail the formation of two-dimensional hole gases (2DHG). In contrast to the common double-heterostructure approach to create 2DHG, which is based on GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff16cb373d82f4b70d9362d38d70fdf2
https://doi.org/10.1088/1361-6463/ac89ff
https://doi.org/10.1088/1361-6463/ac89ff