Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Jarrod Vaillancourt"'
Publikováno v:
IEEE Photonics Technology Letters. 26:745-748
We demonstrate a 320 × 256 longwave infrared focal plane array (FPA) enhanced by backside-configured surface plasmonic structures. The backside-configured plasmonic structures were fabricated on the photodetector side rather than the substrate side.
Autor:
Xuejun Lu, Jarrod Vaillancourt
Publikováno v:
SPIE Newsroom.
Publikováno v:
Optics and Photonics Letters. :57-61
In this paper, a high operating temperature (HOT) middle wave infrared (MWIR) InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 μm to 6 μm. A large photoresponsivity of 6.4
Publikováno v:
Journal of Physics D: Applied Physics. 40:5878-5882
A long wave infrared InAs-InGaAs quantum-dot (QD) infrared photodetector (QDIP) with a peak detection wavelength of 9.9 µm and operating temperature of over 170 K is reported. Peak specific photodetectivity D* of 3.8 × 109 cm Hz1/2 W−1 and 1.3 ×
Publikováno v:
Semiconductor Science and Technology. 22:993-996
An InAs–InGaAs quantum dot (QD) longwave infrared (LWIR) photodetector (QDIP) with a peak wavelength of 8.2 µm is presented. The QDIP has modulation-doped QD active layers. At 77 K, the QDIP showed high photoresponsivities of 5.4 A W−1 and 3.6 A
Publikováno v:
Journal of Physics D: Applied Physics. 50:135101
In this paper, we report a quantum dot infrared photodetector (QDIP) embedded in a plasmonic perfect absorber (PPA) cavity designed at the plasmonic resonant wavelength of 8.2 µm. The reflection spectra and the electric-field are simulated and found
Publikováno v:
AIP Conference Proceedings.
In this work, we fabricated, measured and compared the quantum dots infrared photodetector enhancement by the top- and backside- configured plasmonic structures. The backside configured plasmonic structure can provide much higher device performance e
Publikováno v:
Infrared Physics & Technology. 52:22-24
We report on a low-bias InAs–InGaAs quantum-dot (QD) infrared photodetector (QDIP) with operating temperature of 150 K. Longwave-infrared (LWIR) detection at the peak wavelength of 11.7 μm was achieved. Peak specific photodetectivity D ∗ of 1.7
Publikováno v:
Journal of Applied Physics. 119:193103
In this paper, we analyze quantum selection rules of intersubband transitions in quantum dots (QDs) and determine their impact on plasmonic enhancement in quantum dot infrared photodetectors (QDIPs). Photoluminescence and photocurrent spectrum measur
Autor:
Puminun Vasinajindakaw, Xifeng Qian, Xuejun Lu, Jarrod Vaillancourt, William D. Goodhue, Shivashankar Vangala
Publikováno v:
SPIE Proceedings.
We report a longwave infrared quantum dot infrared photodetector working at room temperature (RT) (298K). A photoresponsivity and photodetectivity of 0.02A/W and 9.0x10 6 cmHz 1/2 /W was achieved at 298K with a low bias voltage of -0.1V. The RT QDIP