Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Jaroslaw Z Domagala"'
Autor:
Oksana Yastrubchak, Nataliia Tataryn, Lukasz Gluba, Sergii Mamykin, Janusz Sadowski, Tomasz Andrearczyk, Jaroslaw Z. Domagala, Olga Kondratenko, Volodymyr Romanyuk, Olena Fedchenko, Yaryna Lytvynenko, Olena Tkach, Dmitry Vasilyev, Sergey Babenkov, Katerina Medjanik, Katarzyna Gas, Maciej Sawicki, Tadeusz Wosinski, Gerd Schönhense, Hans-Joachim Elmers
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural per
Externí odkaz:
https://doaj.org/article/4e457f981bd0410e941bf5fab96403d5
Autor:
Aneta Masłowska, Dominika M. Kochanowska, Adrian Sulich, Jaroslaw Z. Domagala, Marcin Dopierała, Michał Kochański, Michał Szot, Witold Chromiński, Andrzej Mycielski
Publikováno v:
Sensors, Vol 24, Iss 2, p 345 (2024)
This study explores the suitability of (Cd,Mn)Te and (Cd,Mn)(Te,Se) as room-temperature X-ray and gamma-ray detector materials, grown using the Bridgman method. The investigation compares their crystal structure, mechanical and optical properties, an
Externí odkaz:
https://doaj.org/article/7809cc5384dc44bda04e1bd62221f5ea
Autor:
Václav Holý, Jana Stránská Matějová, Ewa Grzanka, Jaroslaw Z. Domagala, Lukáš Horák, Michał Leszczyński, Peter Minárik
Publikováno v:
Journal of Applied Crystallography. 54:62-71
V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a serie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b7fe1aa0b6534540a4ffd733094d82
https://doi.org/10.1107/s1600576720014764
https://doi.org/10.1107/s1600576720014764
Autor:
Janusz Sadowski, Serhii Kryvyi, Jaroslaw Z. Domagala, Anna Kaleta, Sławomir Kret, Ana M. Sanchez, Marta Bilska, Boguslawa Kurowska, Tomasz Wojciechowski, Dorota Janaszko
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c34218c7ab128d2c73d7ff3cd9d44b5
http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-111636
http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-111636
Autor:
Adrian Sulich, Elżbieta Łusakowska, Wojciech Wołkanowicz, Piotr Dziawa, Janusz Sadowski, Badri Taliashvili, Tomasz Wojtowicz, Tomasz Story, Jaroslaw Z. Domagala
Challenges and opportunities arising from molecular beam epitaxial growth of topological crystalline insulator heterostructures composed of a rock-salt SnTe(001) layer of varying thickness (from 80 nm to 1000 nm) and a zinc blende 4 mu m thick CdTe(0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::184272d8095821af2e7d374c199e5362
http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-110635
http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-110635
Autor:
Tomasz Wojtowicz, Andrei Varykhalov, Ondřej Caha, Tomasz Wojciechowski, Tomasz Dietl, Jakub Polaczyński, Timo Hyart, Jaroslaw Z. Domagala, M. Aleszkiewicz, Wojciech Brzezicki, Valentine V. Volobuev, Alexander Kazakov, Bartłomiej Turowski, Zbigniew Adamus, Gunther Springholz
Publikováno v:
Physical Review B. 103
Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities, or two-level systems specific to noncr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d8e4737a0c0ec56802197a529b1405
https://doi.org/10.1103/physrevb.103.245307
https://doi.org/10.1103/physrevb.103.245307
Publikováno v:
Physica B: Condensed Matter. 553:174-181
A comparative study of properties of ZnO:HCl single crystals obtained by various methods is presented. Characterization by photoluminescence, optical and electrical measurements in the wide temperature range has allowed to analyze the energy spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ba4a459469c4fa69af53116ca23116a
https://doi.org/10.1016/j.physb.2018.10.031
https://doi.org/10.1016/j.physb.2018.10.031
Autor:
Paweł, Dłużewski, Jaroslaw Z, Domagala, Sławomir, Kret, Dawid, Jarosz, Marcin, Kryśko, Henryk, Teisseyre
Publikováno v:
The Journal of chemical physics. 154(15)
The rocksalt structure of ZnO has a very promising bandgap for optoelectronic applications. Unfortunately, this high-pressure phase is unstable under ambient conditions. This paper presents experimental results for rocksalt-type ZnO/MgO superlattices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::64e92c99ebb3add9560f4732a85b1f12
https://pubmed.ncbi.nlm.nih.gov/33887922
https://pubmed.ncbi.nlm.nih.gov/33887922
Autor:
Artem Lynnyk, Takeshi Seki, Lech T. Baczewski, Bartlomiej Salski, Tae Yamamoto, Adam Nabiałek, H. Szymczak, H. Głowiński, Adam Pacewicz, Kensaku Takanashi, Jaroslaw Z. Domagala, O. M. Chumak
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Scientific Reports
Scientific Reports
Co2Fe0.4Mn0.6Si (CFMS) and Co2FeGa0.5Ge0.5 (CFGG) Heusler alloys are among the most promising thin film materials for spintronic devices due to a high spin polarization, low magnetic damping and giant/tunneling magnetoresistance ratios. Despite numer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bde27b2ac15d7079b6f09739fa36130b
https://pubmed.ncbi.nlm.nih.gov/33828149
https://pubmed.ncbi.nlm.nih.gov/33828149
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf6eb9ca82160b6f2ea707e131343ba1