Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Jaroslaw Rutkowski"'
Autor:
Tetiana Manyk, Krystian Michalczewski, Krzysztof Murawski, Piotr Martyniuk, Jaroslaw Rutkowski
Publikováno v:
Sensors, Vol 19, Iss 8, p 1907 (2019)
The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors operating in the longwave infrared
Externí odkaz:
https://doaj.org/article/259e90323a204db6946713f200b8c334
Publikováno v:
Opto-Electronics Review.
Publikováno v:
Opto-Electronics Review.
Publikováno v:
I3S2022Warsaw.
Autor:
Andrzej Kozniewski, Piotr Martyniuk, Waldemar Gawron, Jaroslaw Rutkowski, Adam Damiecki, Karol A. Stasiewicz, Paweł Madejczyk
Publikováno v:
IEEE Sensors Journal. 21:4509-4516
This paper presents large area multiple photodetectors of the MOCVD grown HgCdTe heterostructures for operation at temperatures of (200-300)K in the long wavelength infrared range. Conventional long wavelength photovoltaic detectors operating at high
Autor:
Antoni Rogalski, D. Stępień, Jozef Piotrowski, A. Kębłowski, Piotr Martyniuk, Paweł Madejczyk, Waldemar Gawron, Jaroslaw Rutkowski, K. Mlynarczyk
Publikováno v:
Journal of Electronic Materials. 49:6908-6917
This paper summarizes progress in metal organic chemical vapour deposition (MOCVD) technology achieved in recent years at the Institute of Applied Physics, Military University of Technology and VIGO System S.A. MOCVD with a wide range of composition
Autor:
Kacper Grodecki, Krzysztof Murawski, Piotr Martyniuk, Jaroslaw Rutkowski, Tetiana Manyk, Krystian Michalczewski
Publikováno v:
Journal of Materials Science. 55:5135-5144
The type-2 InAs/InAs1−xSbx superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. The algorithm for selection of input parameters (binary and ternary materials) for s
Publikováno v:
Sensors; Volume 23; Issue 3; Pages: 1088
This paper presents a thorough analysis of the current–voltage characteristics of uncooled HgCdTe detectors optimized for different spectral ranges. HgCdTe heterostructures were grown by means of metal–organic chemical vapor deposition (MOCVD) on
Publikováno v:
Sensors. 22:8243
A3B5 materials used for the superlattice (SL) fabrication have properties that enable the design of devices optimized for infrared (IR) detection. These devices are used in the military, industry, medicine and in other areas of science and technology
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-6
We present a comparison of two interband cascade detectors optimized for long-wavelength infrared region: with equal and matched-absorbers. In matched-absorbers architecture, the first absorber determinates the thickness of the subsequent active laye