Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jaroslaw Da̧browski"'
Autor:
Max Franck, Jaroslaw Dabrowski, Markus Andreas Schubert, Christian Wenger, Mindaugas Lukosius
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3260 (2022)
The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temper
Externí odkaz:
https://doaj.org/article/bca196e1d74e4bb98d5fd798cf84b9bb
Autor:
Beata Więcaszek, Przemysław Czerniejewski, Jarosław Dąbrowski, Agata Korzelecka, Krzysztof Formicki, Adam Tański
Publikováno v:
Journal of Water and Land Development, Iss No 62, Pp 97-105 (2024)
In 2022–2023 specimens of A. fallax are recorded for the first time in approximately 17 years in Szczecin Lagoon. We collected 11 specimens of juveniles, 9 premature and mature females, and 9 premature and mature males (20.3–40.7 cm of total leng
Externí odkaz:
https://doaj.org/article/894961c2c7cd4cc78ab1100b21ced33c
Publikováno v:
ECS Transactions. 86:95-103
Rapid thermal annealing (RTA) in silicon wafer processing is a technique used to control point defects, vacancies and silicon interstitials (1,2). The presence of these defects influences the nucleation and precipitation of supersaturated oxygen in C
Autor:
Felix Reichmann, Jaroslaw Dabrowski, Andreas Paul Becker, Wolfgang Matthias Klesse, Klaus Irmscher, Robert Schewski, Zbigniew Galazka, Mattia Mulazzi
Publikováno v:
physica status solidi (b). 259:2100452
This book focuses on the fundamental phenomena at nanoscale. It covers synthesis, properties, characterization and computer modelling of nanomaterials, nanotechnologies, bionanotechnology, involving nanodevices. Further topics are imaging, measuring,
Autor:
Gudrun Kissinger, Dawid Kot, Markus Andreas Schubert, Jaroslaw Dabrowski, Andreas Sattler, Timo Mueller
Publikováno v:
ECS Meeting Abstracts. :1180-1180
With the introduction of the Czochralski method for growing of silicon single crystals oxygen in silicon became an issue with positive and negative impact on silicon devices. On the one hand the oxygen strengthens the wafers against slip dislocation
Autor:
Wilfried Von Ammon, Jaroslaw Dabrowski, Andreas Sattler, V. Akhmetov, Gudrun Kissinger, Dawid Kot
Publikováno v:
ECS Transactions. 16:97-108
Vacancy dependent nucleation curves were measured. They exhibit four maxima which all increase with increasing vacancy concentration. Even at 1000 {degree sign}C considerable nucleation takes place for high vacancy concentrations. The analysis of nuc
Publikováno v:
Solid State Phenomena. :293-302
The coherent agglomeration of interstitial oxygen into single-plane and double-plane plates can explain the two peaks in the M-shaped nucleation curves in Czochralski silicon. The density of nucleation sites for the double-plane plates corresponds to
Autor:
Timo Mueller, Jaroslaw Dabrowski, Christoph Seuring, Gudrun Kissinger, H Richter, Wilfried Von Ammon, Andreas Sattler
Publikováno v:
ECS Transactions. 2:247-260
We have investigated the impact of RTA induced vacancy supersaturation on oxide precipitation based on as much as possible experimental and theoretical values. Oxygen precipitation after RTA processing was found to be controlled by the initial concen
Autor:
Krystyna Konstankiewicz, P. Tarkowski, Jaroslaw Pytka, Paweł Pytka, Marek Kalinowski, Jaroslaw Da̧browski, Szczepan Bartler
Publikováno v:
Journal of Terramechanics. 40:255-269
This paper presents a multidisciplinary approach to a problem of soil–wheel interaction during the landing of an airplane on a grass airfield, with terramechanical analysis of the forces acting between a wheel and the surface. The experiment on str