Zobrazeno 1 - 10
of 250
pro vyhledávání: '"Jaroslav, Fabian"'
Autor:
Swarup Deb, Johannes Krause, Paulo E. Faria Junior, Michael Andreas Kempf, Rico Schwartz, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Tobias Korn
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-genera
Externí odkaz:
https://doaj.org/article/5b0516efbe3c4f6ebd8cf460a84ce047
Autor:
Chirag Chandrakant Palekar, Paulo E. Faria Junior, Barbara Rosa, Frederico B. Sousa, Leandro M. Malard, Jaroslav Fabian, Stephan Reitzenstein
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-8 (2024)
Abstract Van der Waals heterostructures based on transition metal dichalcogenides exhibit physical properties that depend on their monolayer constituents’ twisting angle and stacking order. Particularly in type-II heterostructures, low-energy photo
Externí odkaz:
https://doaj.org/article/f04337e4631d455986912cb7c0efcd2a
Autor:
Frank Volmer, Manfred Ersfeld, Paulo E. Faria Junior, Lutz Waldecker, Bharti Parashar, Lars Rathmann, Sudipta Dubey, Iulia Cojocariu, Vitaliy Feyer, Kenji Watanabe, Takashi Taniguchi, Claus M. Schneider, Lukasz Plucinski, Christoph Stampfer, Jaroslav Fabian, Bernd Beschoten
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-10 (2023)
Abstract Transition metal dichalcogenides (TMDs) have attracted much attention in the fields of valley- and spintronics due to their property of forming valley-polarized excitons when illuminated by circularly polarized light. In TMD-heterostructures
Externí odkaz:
https://doaj.org/article/70ebfad6a6244eab84738fd8b660efa0
Autor:
Sebastian Meier, Yaroslav Zhumagulov, Matthias Dietl, Philipp Parzefall, Michael Kempf, Johannes Holler, Philipp Nagler, Paulo E. Faria Junior, Jaroslav Fabian, Tobias Korn, Christian Schüller
Publikováno v:
Physical Review Research, Vol 5, Iss 3, p L032036 (2023)
In low-temperature resonant Raman experiments on MoSe_{2}-WSe_{2} heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric lines
Externí odkaz:
https://doaj.org/article/7aa95c59989a4cfc8c1de4fea8b793ae
Autor:
Simon Raiber, Paulo E. Faria Junior, Dennis Falter, Simon Feldl, Petter Marzena, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Christian Schüller
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Here, the authors investigate excitonic transitions in mono- and multi-layer WSe2 and MoSe2 by time-resolved Faraday ellipticity (TRFE) with in-plane magnetic fields, and attribute the oscillatory TRFE signal in the multilayer samples to pseudospin q
Externí odkaz:
https://doaj.org/article/df32efee62144d748f42c67a7c64896b
Autor:
Kai-Qiang Lin, Chin Shen Ong, Sebastian Bange, Paulo E. Faria Junior, Bo Peng, Jonas D. Ziegler, Jonas Zipfel, Christian Bäuml, Nicola Paradiso, Kenji Watanabe, Takashi Taniguchi, Christoph Strunk, Bartomeu Monserrat, Jaroslav Fabian, Alexey Chernikov, Diana Y. Qiu, Steven G. Louie, John M. Lupton
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Here, the authors report on evidence of an excitonic species formed by electrons in high-energy conduction band states with a negative effective mass, explaining previous observations of quantum interference phenomena in two-dimensional semiconductor
Externí odkaz:
https://doaj.org/article/fafa369ae6f14535835375610582e035
Autor:
Bálint Fülöp, Albin Márffy, Simon Zihlmann, Martin Gmitra, Endre Tóvári, Bálint Szentpéteri, Máté Kedves, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Christian Schönenberger, Péter Makk, Szabolcs Csonka
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-6 (2021)
Abstract Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin–orbit coupling (SOC) allows to
Externí odkaz:
https://doaj.org/article/d923ea410198455b96ec35ae4c008be4
Autor:
Anamul Md. Hoque, Dmitrii Khokhriakov, Klaus Zollner, Bing Zhao, Bogdan Karpiak, Jaroslav Fabian, Saroj P. Dash
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-9 (2021)
By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the auth
Externí odkaz:
https://doaj.org/article/788d683523974f6a828f23365c55ccd7
Autor:
Kai-Qiang Lin, Paulo E. Faria Junior, Jonas M. Bauer, Bo Peng, Bartomeu Monserrat, Martin Gmitra, Jaroslav Fabian, Sebastian Bange, John M. Lupton
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Here, the authors report on the large twist-angle susceptibility of excitons involving upper conduction bands in transition metal dichalcogenide bilayers. These high-lying excitons couple with band-edge excitons, and give rise to nonlinear quantum-op
Externí odkaz:
https://doaj.org/article/23328d9a1058407caf25749b692297b1
Autor:
Paulo E. Faria Junior, Jaroslav Fabian
Publikováno v:
Nanomaterials, Vol 13, Iss 7, p 1187 (2023)
Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these exciton
Externí odkaz:
https://doaj.org/article/bf33bec3eefa49aea8e6a84c96c54ee0