Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jarod C. Gagnon"'
Autor:
Luke J. Currano, Jarod C. Gagnon, Jennifer M. Boothby, Tessa Van Volkenburg, Zhiyong Xia, Emil McDowell
Publikováno v:
Soft Robotics. 9:154-162
An untethered, soft robot using liquid crystal elastomer (LCE) actuators, onboard power, and wireless Bluetooth control was developed. LCE actuators were thermally triggered using Joule heating and demonstrated an ∼5 N force pull capacity per LCE.
Publikováno v:
MRS Communications. 9:1001-1007
The rise of additive manufacturing (AM) has enabled the rapid production of complex part geometries across multiple material domains. To date, however, AM of inorganic semiconductor materials has not been fully realized due to the difficulty of formi
Autor:
Jarod C. Gagnon, Adam W. Freeman, Christopher M. Hoffman, Konstantinos Gerasopoulos, Jeffrey P. Maranchi, Spencer A. Langevin, Bing Tan, Matthew W. Logan
Publikováno v:
Chemical communications (Cambridge, England). 55(87)
We report the development of a new class of “water-in-salt” electrolytes based on UV photopolymerized acrylic polymers. Incorporation of “water-in-bisalt” in a polymer matrix reduces water activity, expands the electrochemical stability windo
Autor:
Jarod C. Gagnon, Brupbacher Michael C, Adrian Podpirka, David Shrekenhamer, Christine M. Zgrabik
Publikováno v:
Journal of Vacuum Science & Technology B. 39:014001
Molecular beam epitaxial (MBE) deposition allows for the epitaxial growth of materials requiring atomically precise control of nanometer thick layers. A key concern with the growth of smaller bandgap materials on larger bandgap substrates via MBE is
Publikováno v:
Journal of Crystal Growth. 446:1-6
A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN “fins” were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion
Autor:
Adrian Podpirka, David Shrekenhamer, Jarod C. Gagnon, Jonathan M. Pierce, Christine M. Zgrabik
Publikováno v:
Journal of Vacuum Science & Technology B. 38:032210
Van der Waals layered GeTe/Sb2Te3 chalcogenide superlattices have demonstrated outstanding performance for use in dynamic resistive memories in what is known as interfacial phase change memory devices due to their low power requirement and fast switc
Publikováno v:
Journal of Crystal Growth. 393:98-102
The effect of AlN buffer layer morphology on the evolution of growth stress in GaN epilayers deposited by metalorganic chemical vapor deposition on N + ion-implanted AlN/Si(111) substrates was investigated. AlN buffer layers were grown using either a
Autor:
Jeffrey M. Leathersich, Joan M. Redwing, Jarod C. Gagnon, Xiaojun Weng, Mihir Tungare, Fatemeh Shahedipour-Sandvik
Publikováno v:
Journal of Electronic Materials. 41:865-872
In situ wafer curvature measurements were used in combination with postgrowth structural characterization to study the evolution of film stress and microstructure in GaN layers grown by metalorganic chemical vapor deposition on N+ ion-implanted AlN/S
Autor:
Joseph E. Brom, Qi Li, Dongjin Won, Joan M. Redwing, Kalissa Andre, Xiaoxing Xi, Renzhong Du, Xiaojun Weng, Suzanne E. Mohney, Yue Ke, Jarod C. Gagnon, Ke Chen
Publikováno v:
Applied Physics Letters. 100:162110
We report the epitaxial growth of Bi2Se3 thin films on (0001) Al2O3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and lea