Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jarmo Skarp"'
Autor:
Shuo Li, Hele Savin, Howard M. Branz, Sukgeun Choi, Jarmo Skarp, Marko Yli-Koski, Guillaume von Gastrow, Ville Malinen, Benjamin G. Lee
Publikováno v:
Thin Solid Films. 550:541-544
Bilayer coatings deposited by atomic layer deposition are shown to simultaneously achieve excellent passivation and low reflectivity, suitable for application on the front side of high-performance n-type Si solar cells. We designed and fabricated bil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb701495c485289ec20e66f5853a7ba
https://doi.org/10.1016/j.tsf.2013.10.166
https://doi.org/10.1016/j.tsf.2013.10.166
Publikováno v:
Energy Procedia. 8:681-687
We have studied the surface passivation of p- and n-type silicon by thermal atomic layer deposited (ALD) Al2O3. The main emphasis is on different ALD reactant combinations and especially on using ozone as an oxidant. Thermal stability of Al2O3 will a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aaf92ad620ea864a08809ed47ae9ef8
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2993-2997
The materials characteristics of Al2O3 films grown on a Si (100) substrate by traveling wave reactor atomic layer deposition were investigated in the growth temperature ranging from 250 to 500 °C. The Al2O3 films grown using Al(CH3)3 trimethylalumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a82283ee91a0e085bc6dc9d2228aac00
https://doi.org/10.1116/1.580895
https://doi.org/10.1116/1.580895
Publikováno v:
Microelectronic Engineering. 36:91-94
Al 2 O 3 -films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda03d54b1ae3579a553263a4dfca19c
https://doi.org/10.1016/s0167-9317(97)00022-1
https://doi.org/10.1016/s0167-9317(97)00022-1
Publikováno v:
Applied Surface Science. 112:251-254
An atomic layer epitaxy (ALE) reactor has been constructed for R&D purposes. This piece of equipment can handle up to 30×40 cm2 rectangular plates or 300 mm wafers as substrates. The basic functions of the reactor are described. ZnO and Al2O3 were u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd1d2c2804dae44a9a21933cf999c17
https://doi.org/10.1016/s0169-4332(96)01000-8
https://doi.org/10.1016/s0169-4332(96)01000-8
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
A bilayer coating of Al 2 O 3 and TiO 2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294f4e0ab6bb9ad9959c2340aed3879d
https://doi.org/10.1109/pvsc.2012.6317787
https://doi.org/10.1109/pvsc.2012.6317787
Publikováno v:
Applied Surface Science. :34-40
An atomic layer epitaxy process for growing Al-doped ZnO thin films is presented. Organometallic precursors of zinc and aluminum were used to react with water at substrate temperatures of 120–350°C. Growth rate varied from 0.5 to 2.5 A/cycle, depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c995872622c5d4c6fff1abdd419e515
https://doi.org/10.1016/0169-4332(94)90192-9
https://doi.org/10.1016/0169-4332(94)90192-9
Publikováno v:
MRS Proceedings. 471
The materials characteristics of Al2O3 films grown on Si (100) substrate by traveling wave reactor atomic layer deposition were investigated at the growth temperature ranging from 250 to 500°C. The Al2O3 films grown using Al(CH3)3(TMA) and H2O as pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3f00448e75eb2adfd1c9b3bf063fe1
https://doi.org/10.1557/proc-471-81
https://doi.org/10.1557/proc-471-81
Publikováno v:
MRS Proceedings. 222
Polycrystalline CdTe films up to 2 μm thick were grown by Atomic Layer Epitaxy (ALE) at 350–450°C. The growth was carried out in a lateral flow reactor, using the elements as source materials and 25 cm2 glass/ITO and glass/ITO/SnO2 as substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de4500cc2579c478e172d039a471e362
https://doi.org/10.1557/proc-222-269
https://doi.org/10.1557/proc-222-269
Publikováno v:
MRS Proceedings. 222
Polycrystalline cadmium sulphide (CdS) thin films were grown by Atomic Layer Epitaxy (ALE) using indium tin oxide and tin oxide coated glass substrates. Some of the experiments were made using elemental reactants, and others with inorganic compounds
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df86a5262d5eab3ae5e511423448b26b
https://doi.org/10.1557/proc-222-263
https://doi.org/10.1557/proc-222-263