Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jarez Miah"'
Autor:
Md. Jarez Miah, Anisuzzaman Boni, Seval Arslan, Dominik Martin, Pietro Della Casa, Paul Crump
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-5 (2022)
GaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power Popt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS) epitaxial layer structure diminishes power saturat
Externí odkaz:
https://doaj.org/article/05bf7204611842fdb1c332a869b9a754
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-5 (2022)
Progress in epitaxial design is shown to enable increased optical output power Popt and power conversion efficiency ηE and decreased lateral far-field divergence angle in GaAs-based distributed Bragg reflector (DBR) broad-area (BA) diode lasers. We
Externí odkaz:
https://doaj.org/article/d6348468af9a46be88a6c0c3d4bdcac8
Autor:
Günther Tränkle, Paul Crump, Mohamed Elattar, Stephan Strohmaier, Stewart McDougall, Stefan Gruetzner, Andre Maaßdorf, Simon Rauch, Carlo Holly, Dominik Martin, Md. Jarez Miah, Michael Ekterai, Matthias M. Karow
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-11
Experimental studies into the beam parameter product ( BPP ) of 940–980 nm GaAs-based high-power diode lasers are presented. Such lasers exhibit broadening far field and narrowing near field with increasing bias, with BPP increasing tenfold over th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637b02f975488847ccece79e2eae021c
https://doi.org/10.1109/jstqe.2021.3095660
https://doi.org/10.1109/jstqe.2021.3095660
Autor:
Paul A. Crump, Mohamed Elattar, Mohammad Jarez Miah, Michael Ekterai, Matthias M. Karow, Dominik Martin, Pietro Della Casa, Andre Maassdorf, Stewart McDougall, Carlo Holly, Simon Rauch, Stefan Gruetzner, Stephan G. Strohmaier, Andrea Knigge, Günther Tränkle
Publikováno v:
High-Power Diode Laser Technology XX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e53b938af7f862a09ca421fb70143c5
https://doi.org/10.1117/12.2610277
https://doi.org/10.1117/12.2610277
Autor:
Mohammad Jarez Miah, Anisuzzaman Boni, Dominik Martin, Andrea Knigge, Pietro Della Casa, Paul A. Crump
Publikováno v:
High-Power Diode Laser Technology XX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f66df536cc22ff1f0d900acf4203d7
https://doi.org/10.1117/12.2609831
https://doi.org/10.1117/12.2609831
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14b9c5f1a8e673a64f604882925e6548
https://doi.org/10.1109/islc51662.2021.9615832
https://doi.org/10.1109/islc51662.2021.9615832
Autor:
Jörg Fricke, Md. Jarez Miah, S. Kreutzmann, Paul Crump, M. Wilkens, Andrea Knigge, Hans Wenzel
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd949ee46320673ef9ca34b958443af
https://doi.org/10.1109/islc51662.2021.9615726
https://doi.org/10.1109/islc51662.2021.9615726
Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides
Publikováno v:
Applied Physics Letters. 113:221107
High-brightness vertical broad-area edge-emitting (HiBBEE) semiconductor lasers in the 1060 nm wavelength range with excellent beam quality in both lateral and vertical directions are presented. An approach to modify the thresholds of the transverse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::650f4144b4d0dde0a7eaee2c8559596a
https://doi.org/10.1063/1.5054645
https://doi.org/10.1063/1.5054645
Publikováno v:
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC.
The work has fabricated flip-chip-bondable VCSELs for hybrid integration with atomic clock microsystems. A shallow surface relief in combination with a surface grating are etched in an extra topmost GaAs quarter-wave antiphase layer in the VCSEL stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4fd9586d9a4921d14200ac55523b573
https://doi.org/10.1109/cleoe-iqec.2013.6800728
https://doi.org/10.1109/cleoe-iqec.2013.6800728
Conference
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